Kunalsinh Naransinh Rathod
Researcher at Department of Materials Science and Engineering; Solid State Physics
- E-mail:
- kunalsinh.rathod@angstrom.uu.se
- Visiting address:
- Ångströmlaboratoriet, Regementsvägen 10
- Postal address:
- Box 35
751 03 UPPSALA
Publications
Recent publications
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Interface-Induced Synaptic Performance in CeO2/La0.8Ba0.2MnO3 Oxygen Reservoir Junction
Part of ACS Applied Materials and Interfaces, p. 69666-69675, 2025
- DOI for Interface-Induced Synaptic Performance in CeO2/La0.8Ba0.2MnO3 Oxygen Reservoir Junction
- Download full text (pdf) of Interface-Induced Synaptic Performance in CeO2/La0.8Ba0.2MnO3 Oxygen Reservoir Junction
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Thickness-dependent charge transport across CdO/La0.3Ca0.7MnO3 n-n junction interfaces
Part of Materials Science in Semiconductor Processing, 2025
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Part of ACS Applied Materials and Interfaces, p. 19225-19234, 2024
- DOI for Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits
- Download full text (pdf) of Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits
All publications
Articles in journal
-
Interface-Induced Synaptic Performance in CeO2/La0.8Ba0.2MnO3 Oxygen Reservoir Junction
Part of ACS Applied Materials and Interfaces, p. 69666-69675, 2025
- DOI for Interface-Induced Synaptic Performance in CeO2/La0.8Ba0.2MnO3 Oxygen Reservoir Junction
- Download full text (pdf) of Interface-Induced Synaptic Performance in CeO2/La0.8Ba0.2MnO3 Oxygen Reservoir Junction
-
Thickness-dependent charge transport across CdO/La0.3Ca0.7MnO3 n-n junction interfaces
Part of Materials Science in Semiconductor Processing, 2025
-
Part of ACS Applied Materials and Interfaces, p. 19225-19234, 2024
- DOI for Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits
- Download full text (pdf) of Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits