Hydrogen incorporation in silicon crystals studied by ion beams

Background

Medium energy ion scattering (MEIS) provides high-depth resolution and sensitivity by employing projectiles with keV energies. MEIS can also be used for the detection of light recoils with extreme depth resolution and sensitivity. Implementing time-of-flight elastic recoil detection in transmission experiments using a pulsed beam of heavy ions (namely Ar and/or Ne) with keV energies allows simultaneous detection of all light constituents. The loading of hydrogen into materials is technologically highly relevant for sensor and energy storage applications as well as for materials ageing when using hydrogen as process gas in decarbonized industrial applications. At the same time, the thermodynamics of hydride formation, in particularly near surfaces of materials needs to be much better understood.

Project goal and work plan

• Investigate the implantation of H in Si crystals
• Help us to create and characterize – using keV ions and recoil detection analytical technique – the implanted crystals
• Access and use of a National Research Facility for particle accelerators: The Tandem Laboratory

In this thesis project you will:

• Learn techniques for in-situ implantation and characterization using keV ions
• Work with vacuum technology
• Use advanced accelerator based analytical techniques
• Be involved in an academic research environment

Desired qualifications/experience

The applicant should be enrolled on a program at Uppsala University and possess:

• Good practical abilities
• Strong interest in experimental work;
• Excellent skills in both written and spoken English.

Students seeking diploma-work projects at both Master and Bachelor level are encouraged to apply, as are students seeking project work for courses (but such projects must correspond to at least 15 credits). The possibility of paired or group work can be discussed.

For further information please contact:
Eleni Ntemou