Kai Siegbahn Laboratory
In the Kai Siegbahn-Laboratory we study surfaces and interfaces of relevance for energy materials and devices with a combination of x-ray photoelectron spectroscopy (XPS) and hard x-ray photoelectron spectroscopy (HAXPES).
X-ray photoelectron spectroscopy is a powerful tool to study electronic levels in matter – and how these levels shift depending on the chemical environment, the so called chemical shift. The method is based on the photoelectric effect and was developed at Uppsala University, starting in the 1950’s, by a group led by Kai Siegbahn. The method is surface sensitive (a few nanometers), but by increasing the x-ray energy to the tender or hard x-ray regime the information depth becomes longer (tens of nanometers). This length scale is critical to investigate buried interfaces and the chemical evolution of those that constitute many functional parts of modern devices built up from modern materials.
The heart of this laboratory is a combined XPS/HAXPES instrument with monochromatic Al Kα (1.49 keV) and Ga Kα (9.25 keV) X-ray sources and a hemispherical electron analyzer. Solid samples, both conducting and non-conducting, can be measured under ultrahigh vacuum (5⋅10-10 mbar) conditions. The instrument capabilities include cooling to liquid nitrogen temperatures and heating to 900 °C. A four-probe sample connector allows measurements during applied potential or current in situ.
Current development includes a glove-box for sample treatment, a chamber for sample preparation such as cleaning, deposition, dosing and LEED, as well as possibilities for long-term storage of samples in vacuum.
Student projects
Are you interested in an undergraduate research project at the Kai Siegbahn Laboratory, please contact Rebecka Lindblad. Examples of completed projects:
Publications
The influence of hydrogen on the electronic structure in transition metallic glasses
Johan Bylin, Rebecka Lindblad, Lennart Spode, Ralph H Scheicher, Gunnar K Pálsson
arXiv preprint arXiv:2403.13371
Synchronized Photoluminescence and Electrical Mobility Enhancement in 2D WS2 through Sequence-Specific Chemical Passivation
Zhaojun Li, Ulrich Noumbe, Elin Berggren, Henry Nameirakpam, Takashi Kimura, Eito Asakura, Victor Gray, Tomas Edvinsson, Andreas Lindblad, Makoto Kohda, Rafael Araujo, Akshay Rao, M Venkata Kamalakar
ChemRxiv. 2024; doi:10.26434/chemrxiv-2024-fppl4
Electronic Structure and Surface Chemistry of BaZrS3 Perovskite Powder and Sputtered Thin Film. Riva, S., Mukherjee, S., Butorin, S. M., Comparotto, C., Aggarwal, G., Johannesson, E., Abdel-Hafiez, M., Scragg, J. & Rensmo, H. ACS Appl. Mater. Interfaces 16, 40210–40221 (2024).
Large-Scale Direct Growth of Monolayer MoS2 on Patterned Graphene for van der Waals Ultrafast Photoactive Circuits
Rahul Sharma, Henry Nameirakpam, David Muradas Belinchón, Prince Sharma, Ulrich Noumbe, Daria Belotcerkovtceva, Elin Berggren, Viliam Vretenár, Lubomir Vanco, Matus Matko, Ravi K Biroju, Soumitra Satapathi, Tomas Edvinsson, Andreas Lindblad, M Venkata Kamalakar
ACS Applied Materials & Interfaces 16 (29), 38711-38722, 2024
Exploiting hot electrons from a plasmon nanohybrid system for the photoelectroreduction of CO2
Ananta Dey, Vitor R Silveira, Robert Bericat Vadell, Andreas Lindblad, Rebecka Lindblad, Vitalii Shtender, Mikaela Görlin, Jacinto Sá
Communications Chemistry, 7 (1), 59, 2024
Scalable and highly tunable conductive oxide interfaces
Dana Cohen-Azarzar, Maria Baskin, Andreas Lindblad, Felix Trier, Lior Kornblum
APL Materials 11 (11), 2023
Single-electron transfer reactions on surface-modified gold plasmons
Robert Bericat-Vadell, Pandiaraj Sekar, Yeersen Patehebieke, Xianshao Zou, Nidhi Kaul, Peter Broqvist, Rebecka Lindblad, Andreas Lindblad, Anna Arkhypchuk, Carl-Johan Walletin, Jacinto Sá
Materials Today Chemistry, 34, 101783, 2023
Contact
Rebecka Lindblad
Håkan Rensmo
Andreas Lindblad
Contact
- Programme Professor Condensed Matter Physics of Energy Materials
- Håkan Rensmo
- Head of Division
- Nicusor Timneanu
- Visiting address: Ångström Laboratory, Lägerhyddsvägen 1, house 6, floor 0.