Hans-Olof Blom

In-situ etch rate study of HfxLayOz in Cl-2/BCl3 plasmas using the quartz crystal microbalance

Marchack, Nathan; Kim, Taeseung; Blom, Hans-Olof; Chang, Jane P.

Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 2015

• DOI för In-situ etch rate study of HfxLayOz in Cl-2/BCl3 plasmas using the quartz crystal microbalance

Plasma Etching of Hf-based High-k Thin Films. Part II, Ion Enhanced Surface Reaction Mechanisms

Martin, Ryan M.; Blom, Hans-Olof; Chang, Jane P.

Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 217-223, 2009

• DOI för Plasma Etching of Hf-based High-k Thin Films. Part II, Ion Enhanced Surface Reaction Mechanisms

The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge

Sawkar-Mathur, Monica; Perng, Y-C; Lu, Jun; Blom, Hans-Olof et al.

Ingår i Applied Physics Letters, s. 233501, 2008

• DOI för The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge

Generation of Oxide Nanopatterns by Combining Self-Assembly of S-Layer Proteins and Area-Selective Atomic Layer Deposition

Liu, Jiurong; Mao, Yuanbing; Lan, Esther; Banatao, Diosdado Rey et al.

Ingår i Journal of the American Chemical Society, s. 16908-16913, 2008

• DOI för Generation of Oxide Nanopatterns by Combining Self-Assembly of S-Layer Proteins and Area-Selective Atomic Layer Deposition

Structural properties of epitaxial gamma-Al2O3(111) thin films on 4H-SiC(0001)

Tanner, C. M.; Sawkar-Mathur, M.; Lu, Jun; Blom, Hans-Olof et al.

Ingår i Applied Physics Letters, 2007

• DOI för Structural properties of epitaxial gamma-Al2O3(111) thin films on 4H-SiC(0001)

In-situ etch rate study of HfxLayOz in Cl-2/BCl3 plasmas using the quartz crystal microbalance

Marchack, Nathan; Kim, Taeseung; Blom, Hans-Olof; Chang, Jane P.

Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 2015

• DOI för In-situ etch rate study of HfxLayOz in Cl-2/BCl3 plasmas using the quartz crystal microbalance

Plasma Etching of Hf-based High-k Thin Films. Part II, Ion Enhanced Surface Reaction Mechanisms

Martin, Ryan M.; Blom, Hans-Olof; Chang, Jane P.

Ingår i Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, s. 217-223, 2009

• DOI för Plasma Etching of Hf-based High-k Thin Films. Part II, Ion Enhanced Surface Reaction Mechanisms

The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge

Sawkar-Mathur, Monica; Perng, Y-C; Lu, Jun; Blom, Hans-Olof et al.

Ingår i Applied Physics Letters, s. 233501, 2008

• DOI för The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge

Generation of Oxide Nanopatterns by Combining Self-Assembly of S-Layer Proteins and Area-Selective Atomic Layer Deposition

Liu, Jiurong; Mao, Yuanbing; Lan, Esther; Banatao, Diosdado Rey et al.

Ingår i Journal of the American Chemical Society, s. 16908-16913, 2008

• DOI för Generation of Oxide Nanopatterns by Combining Self-Assembly of S-Layer Proteins and Area-Selective Atomic Layer Deposition

Structural properties of epitaxial gamma-Al2O3(111) thin films on 4H-SiC(0001)

Tanner, C. M.; Sawkar-Mathur, M.; Lu, Jun; Blom, Hans-Olof et al.

Ingår i Applied Physics Letters, 2007

• DOI för Structural properties of epitaxial gamma-Al2O3(111) thin films on 4H-SiC(0001)

Engineering epitaxial gamma-Al2O3 gate dielectric films on 4H-SiC

Tanner, Carey M; Toney, Michael F; Lu, Jun; Blom, Hans-Olof et al.

Ingår i Journal of Applied Physics, s. 104112-104112-6, 2007

• DOI för Engineering epitaxial gamma-Al2O3 gate dielectric films on 4H-SiC

Piezoresistive and self-actuated 128-cantilever arrays for nanotechnology applications

Rangelow, I. W.; Ivanov, Tzv.; Ivanova, K.; Volland, B. E. et al.

Ingår i Microelectronic Engineering, s. 1260-1264, 2007

• DOI för Piezoresistive and self-actuated 128-cantilever arrays for nanotechnology applications

Nanostructure and Temperature-dependent Photoluminescence of Er-doped Y2O3 Thin Films for Micro-optoelectronic Integrated Circuits

Van, T. T.; Hoang, J.; Osrumov, R.; Wang, K. L. et al.

Ingår i Journal of Applied Physics, 2006

• DOI för Nanostructure and Temperature-dependent Photoluminescence of Er-doped Y2O3 Thin Films for Micro-optoelectronic Integrated Circuits

Effects of post-deposition annealing on the material characteristics of ultrathin HfO2 films on silicon

Puthenkovilakam, R; Lin, Y-S; Choi, J; Lu, Jun et al.

Ingår i J Appl Phys, 2005

Patterning of tantalum pentoxide, a high epsilon material, by inductively coupled plasma etching

Jonsson, Lars; Westlinder, Jörgen; Engelmark, Fredrik; Hedlund, Christer et al.

Ingår i J Vac Sci Technol, s. 1906-1910, 2000

Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates

Schaepkens, M; Oehrlein, G S; Hedlund, Christer; Jonsson, Lars et al.

Ingår i J Vac Sci Technol, s. 3281, 1998

Computer modeling as a tool to predict deposition rate and film composition in the reactive sputtering process

Berg, Sören; Nyberg, Tomas; Blom, Hans-Olof; Nender, Claes

Ingår i JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, s. 1277-1285, 1998

Discharge disruptions in a helicon plasma source

Shamrai, K P; Virko, V F; Blom, Hans-Olof; Pavlenko, V P et al.

Ingår i J Vac Sci Technol A, s. 2864-2874, 1997

Angular dependence of the polysilicon etch rate during dry etching in SF6 and Cl-2

Hedlund, Christer; Jonsson, Lars; Katardjiev, Ilia; Berg, Sören et al.

Ingår i JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, s. 686-691, 1997

A Method for the Determination of the Angular Dependence during Dry Etching

Hedlund, Christer; Strandman, Carola; Katardjiev, Ilia; Bäcklund, Ylva et al.

Ingår i Journal of Vacuum Science & Technology B, s. 3239, 1996

• DOI för A Method for the Determination of the Angular Dependence during Dry Etching

Controlled topography production - True 3D simulation and experiment

Jonsson, Lars; Hedlund, Christer; Katardjiev, Ilia; Barklund, Anna et al.

Ingår i Vacuum, s. 971-975, 1995

Piezoresistive Self-Actuated Cantilever Arrays for Nanotechnological Application

Ivanov, T; Volland, B E; Rangelow, I W; Persaud, A et al.

2006

Growth of Epitaxial y-Al2O3 Films on 4H-SiC

Tanner, C M; Lu, J; Blom, Hans-Olof; Chang, J P

2006

Ion-Enhanced Plasma Etching of Hafnium Aluminates in Chlorine Based Plasmas

Martin, R M; Blom, Hans-Olof; Chang, J P

2006

Ion Enchanced Plasma Etching of Metal Oxides in Chlorine Based Plasma

Martin, R M; Blom, Hans-Olof; Sawkar, M; Chang, J P

Ingår i Presented at American Vacuum Society 52nd National Symposium 2005 in Boston, USA, 2005

AlN Coating and Oxidation on Silicon Field Emitters to Enhance Reliability for Space Applications

Wang, K L; Aplin, B J; Kent, S E; Huq, R et al.

Ingår i The 17th International Vacuum Nanotechnology Conference, 2004, Cambridge, California, USA, 2004

Flatband Voltage Adjustment USing Reactively Sputtered TiN Metal Gates

Sjöblom, Gustaf; Blom, Hans-Olof; Olsson, Jörgen

Ingår i Proc. of the AVS 4th International Conference on Microelectronics & Interfaces, Santa Clara, USA, s. 215-217, 2003

Investigation of ALCVD TM TiN/Al2O3/HfAlOx/Al2O3 stack on epitaxial Si and Si0.7Ge0.3

Wu, D; Lindgren, A-C; Persson, S; Hellberg, P-E et al.

Ingår i IEEE SISC, December, 2002

Substitutional Effects of the Dielectric Constant in Ta2O5

Larsson, Karin; Westlinder, Jörgen; Blom, Hans-Olof; Olsson, Jörgen

Ingår i Presented at AVS, Oct, 2001

Electrical Characterization of Thin Ta2O5 Films

Westlinder, Jörgen; Blom, Hans-Olof; Olsson, Jörgen

Ingår i The 19th Nordic Semiconductor Meeting, Copenhagen, Denmark, May, 2001

Integrated capacitors using reactive DC magnetron Co-sputtered (Ta2O5)1-x(TiO2)x thin films

Westlinder, Jörgen; Engelmark, Fredrik; Blom, Hans-Olof; Olsson, Jörgen et al.

Ingår i The AVS 2nd International Conference on Microelectronics & Interfaces, Santa Clara, USA, 2001

Simulation and dielectric characterization of reactive DC magnetron Co-sputtering of (Ta2O5)1-x(TiO2)x

Westlinder, Jörgen; Zhang, Yanwen; Engelmark, Fredrik; Blom, Hans-Olof et al.

Ingår i American Vacuum Society 47th National Symposium 2000 Boston, USA, 2000

Analysis and Simulation of Mask Erosion During Etching

Westlinder, Jörgen; Engelmark, Fredrik; Jonsson, Lars; Hedlund, Christer et al.

Ingår i American Vacuum Society 46th National Symposium, Seattle, USA, 1999

Selective SiOs to Si3N4 etching in inductively coupled fluorocarbon plasmas

Schaepkens, M; Standaert, T E F M; Reuger, N R; Oehrlein, G S et al.

Ingår i The 25th national symposium UNY-VAC, Albany NY, 1998

Patterning of Reactively Sputteres Tantalum Pentoxide, a High Epsilon Material, by Plasma Etching

Jonsson, Lars; Engelmark, Fredrik; Du, Jing; Hedlund, Christer et al.

Ingår i The American Vacuum Society 45th National Symposium in Baltimore, 1998

Angular dependence of the polysilicon etch rate during dry etching in SF6 and Cl2

Hedlund, Christer; Jonsson, Lars; Katardjiev, Ilia; Berg, Sören et al.

Ingår i The 43rd International Symposium of the American Vacuum Society, Philadelphia PA, USA, 1997

Characterization and optimization of a dry etching process for silicon nitride spacer formation

Jonsson, Lars; Hedlund, Christer; Larsson, T; Katardjiev, Ilia et al.

Ingår i The 44th international symposium of the American Vacuum Society, San José, USA, 1997

A new self aligned asymmetric lateral bipolar transistor

Jonsson, Lars; Olsson, Jörgen; Edholm, Bengt; Söderbärg, Anders et al.

Ingår i The 17th Nordic Semiconductor Meeting, Norway, June, 1996

A method for the determination of the angular dependence during dry etching

Hedlund, Christer; Strandman, Carola; Katardjiev, Ilia; Bäcklund, Ylva et al.

Ingår i The American Vacuum Society, 42nd National Symposium, Minneapolis, USA, Oct, 1995