Jörgen Olsson
Professor i fasta tillståndets elektronik vid Institutionen för materialvetenskap; Solcellsteknik
- Telefon:
- 018-471 30 35
- Mobiltelefon:
- 070-656 42 07
- E-post:
- jorgen.olsson@angstrom.uu.se
- Besöksadress:
- Ångströmlaboratoriet, Regementsvägen 10
- Postadress:
- Box 35
751 03 UPPSALA
Ladda ned kontaktuppgifter för Jörgen Olsson vid Institutionen för materialvetenskap; Solcellsteknik
- Akademiska meriter:
- TeknD, Docent i teknisk fysik med inriktning mot elektronik
- CV:
- Ladda ned CV
- ORCID:
- 0000-0002-9882-4782
Kort presentation
- Stf. Prefekt, Institutionen för materialvetenskap
- Studierektor för forskarutbildning, Institutionen för materialvetenskap
- Ordförande Forskarutbildningsnämnden (FUN), Teknat
- Ledamot i Forskningsberedningen (FB) och Utbildningsberedningen (UB), Teknat
- Representant i Utskottet för lika villkor, Teknat
- Forskarutbildningsansvarig professor (FUAP) för Teknisk fysik (utan inriktning)
- Pedagogisk mentor
Biografi
Prof. Jörgen Olsson received the Ph.D. degree in electronics from Uppsala University, Sweden, in 1996. During 1997 he was a visiting scientist at Digital Semiconductor, Hudson, MA, USA, working on modeling of ion implantation and CMOS process integration. In 2008 he was promoted to Professor in Solid-State Electronics, Uppsala University. He was the head of the Solid State Device Group at the Ångström Laboratory, Uppsala University. His research interests include the fields of high-frequency MOS-based devices and processes, SOI-technology, and RF-power devices. Recent research is focused on thin-film solar cells. He is also the director of postgraduate studies and the deputy head of the department of materials science and engineering. He is author of over 180 scientific papers in international journals and conferences.
Publikationer
Urval av publikationer
Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
Ingår i Solar Energy Materials and Solar Cells, 2020
- DOI för Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
- Ladda ner fulltext (pdf) av Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
Ingår i IEEE Journal of Photovoltaics, s. 882-891, 2017
Ingår i IEEE Journal of Photovoltaics, s. 1421-1425, 2017
Advancing the understanding of reverse breakdown in Cu(In,Ga)Se2 solar cells
Ingår i IEEE Journal of Photovoltaics, s. 1136-1142, 2017
A New Latch-Free LIGBT on SOI with Very High Current Density and Low Drive Voltage
Ingår i Solid-State Electronics, s. 179-184, 2016
Ingår i Solar Energy Materials and Solar Cells, s. 364-370, 2016
Ingår i IEEE transactions on device and materials reliability, s. 191-197, 2015
Ingår i Journal of Physics D, s. 485104, 2014
- DOI för Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect models
- Ladda ner fulltext (pdf) av Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect models
LDMOS with over 0.3 W/mm output power at 8 GHz integrated in 65nm CMOS
Ingår i Proceedings of GigaHertz Symposium, s. 73, 2014
Modeling Ga-profiles for Cu(In,Ga)Se2 thin film solar cells with varying defect density
Ingår i 23rd International Photovoltaic Science and Engineering Conference; Taipei, Taiwan; October 28 - Nov 1, 2013, 2013
Ingår i The Journal of Physical Chemistry C, s. 5552-5556, 1994
Senaste publikationer
Kilowatt Power Amplifier With Improved Power Back-Off Efficiency for Cyclotron Application
Ingår i IEEE Transactions on Microwave Theory and Techniques, s. 1401-1409, 2022
Taper Transmission Line Based Measurement—An Thru-Only De-Embedding Approach
Ingår i IEEE transactions on microwave theory and techniques, s. 4199-4210, 2022
An improved analytical model for broadside coupled transmission line used on planar circuit
Ingår i AEU - International Journal of Electronics and Communications, 2021
- DOI för An improved analytical model for broadside coupled transmission line used on planar circuit
- Ladda ner fulltext (pdf) av An improved analytical model for broadside coupled transmission line used on planar circuit
Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
Ingår i Solar Energy Materials and Solar Cells, 2020
- DOI för Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
- Ladda ner fulltext (pdf) av Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
Ingår i Review of Scientific Instruments, 2019
- DOI för Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
- Ladda ner fulltext (pdf) av Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
Alla publikationer
Artiklar i tidskrift
Kilowatt Power Amplifier With Improved Power Back-Off Efficiency for Cyclotron Application
Ingår i IEEE Transactions on Microwave Theory and Techniques, s. 1401-1409, 2022
Taper Transmission Line Based Measurement—An Thru-Only De-Embedding Approach
Ingår i IEEE transactions on microwave theory and techniques, s. 4199-4210, 2022
An improved analytical model for broadside coupled transmission line used on planar circuit
Ingår i AEU - International Journal of Electronics and Communications, 2021
- DOI för An improved analytical model for broadside coupled transmission line used on planar circuit
- Ladda ner fulltext (pdf) av An improved analytical model for broadside coupled transmission line used on planar circuit
Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
Ingår i Solar Energy Materials and Solar Cells, 2020
- DOI för Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
- Ladda ner fulltext (pdf) av Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
Ingår i Review of Scientific Instruments, 2019
- DOI för Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
- Ladda ner fulltext (pdf) av Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
Protein sensing beyond the Debye Length Using Graphene Field-effect Transistors
Ingår i IEEE Sensors Journal, s. 6497-6503, 2018
Ingår i Microwave and optical technology letters (Print), s. 163-171, 2018
- DOI för Time Domain Characterization of High Power Solid State Amplifiers for the Next Generation Linear Accelerators
- Ladda ner fulltext (pdf) av Time Domain Characterization of High Power Solid State Amplifiers for the Next Generation Linear Accelerators
Interface Dependent Effective Mobility in Graphene Field Effect Transistors
Ingår i Journal of Electronic Materials, s. 1757-1761, 2018
- DOI för Interface Dependent Effective Mobility in Graphene Field Effect Transistors
- Ladda ner fulltext (pdf) av Interface Dependent Effective Mobility in Graphene Field Effect Transistors
Ingår i IEEE Journal of Photovoltaics, s. 882-891, 2017
Ingår i IEEE Journal of Photovoltaics, s. 1421-1425, 2017
Advancing the understanding of reverse breakdown in Cu(In,Ga)Se2 solar cells
Ingår i IEEE Journal of Photovoltaics, s. 1136-1142, 2017
Mobility and charge transport mechanisms of a field grading material
Ingår i IEEE transactions on dielectrics and electrical insulation, 2017
Power Performance of 65 nm CMOS Integrated LDMOS Transistors at WLAN and X-band Frequencies
Ingår i International journal of microwave and wireless technologies, s. 135-141, 2016
A New Latch-Free LIGBT on SOI with Very High Current Density and Low Drive Voltage
Ingår i Solid-State Electronics, s. 179-184, 2016
Ingår i Solar Energy Materials and Solar Cells, s. 364-370, 2016
Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures
Ingår i Journal of Vacuum Science & Technology B, 2016
- DOI för Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures
- Ladda ner fulltext (pdf) av Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures
Ingår i IEEE transactions on device and materials reliability, s. 191-197, 2015
Ingår i Microelectronic Engineering, s. 37-42, 2015
A two-in-one process for reliable graphene transistors processed with photolithography
Ingår i Applied Physics Letters, 2015
- DOI för A two-in-one process for reliable graphene transistors processed with photolithography
- Ladda ner fulltext (pdf) av A two-in-one process for reliable graphene transistors processed with photolithography
Ingår i Journal of Electronic Materials, s. 541-547, 2014
Thermal characterization of polycrystalline SiC
Ingår i Journal of Electronic Materials, s. 1150-1153, 2014
Electrical properties of Ag/Ta and Ag/TaN thin-films
Ingår i Microelectronic Engineering, s. 257-261, 2014
- DOI för Electrical properties of Ag/Ta and Ag/TaN thin-films
- Ladda ner fulltext (pdf) av Electrical properties of Ag/Ta and Ag/TaN thin-films
RF losses, crosstalk and temperature dependence for SOI and Si/SiC hybrid substrates
Ingår i Solid-State Electronics, s. 59-65, 2014
Ingår i Journal of Physics D, s. 485104, 2014
- DOI för Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect models
- Ladda ner fulltext (pdf) av Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect models
Morphological instability of Ag films caused by phase transition in the underlying Ta barrier layer
Ingår i Applied Physics Letters, 2014
Fabrication and Characterization of 150 mm Silicon-on-polycrystalline-Silicon Carbide Substrates
Ingår i Journal of Electronic Materials, s. 480-487, 2012
Ingår i Solid-State Electronics, s. 14-19, 2012
Electrical characterization of wurtzite (Al,B)N thin films
Ingår i Vacuum, s. 466-470, 2011
Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors
Ingår i Solid-State Electronics, s. 171-177, 2010
Oxygen out-diffusion from buried layers in SOI and SiC-SOI substrates
Ingår i Solid-State Electronics, s. 153-157, 2010
Investigation of SOI-LDMOS for RF-power applications using Computational Load-Pull
Ingår i IEEE Transactions on Electron Devices, s. 505-511, 2009
A Computational Load-Pull Method with Harmonic Loading for High-Efficiency Investigations
Ingår i Solid-State Electronics, s. 86-94, 2009
Thick NiSi Electrodes for AlN Electroacoustic Applications
Ingår i Electrochemical and solid-state letters, 2009
Optimisation of a smooth multilayer Nickel Silicide surface for ALN growth
Ingår i Journal of Physics, Conference Series, 2008
Oxide-Free Silicon to Silicon Carbide Heterobond
Ingår i ESC Transactions, s. 377-383, 2008
Ingår i Solid-State Electronics, s. 1024-1031, 2008
SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation
Ingår i IEEE Electron Device Letters, s. 125-127, 2008
Ingår i Microelectronic Engineering, s. 1635-1638, 2007
Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-k dielectrics
Ingår i Microelectronics and reliability, s. 536-539, 2007
Anisotropic dry etching of boron doped single crystal CVD diamond
Ingår i Carbon, s. 1839-1842, 2005
Low Resistivity SOI for Substrate Crosstalk Reduction
Ingår i IEEE Transactions on Electron Devices, s. 1920-1922, 2005
Investigation of the Thermal Stability of Reactively Sputter Deposited TiN MOS Gate Electrodes
Ingår i IEEE Transactions on Electron Devices, s. 2349-2352, 2005
Low-resistivity ZrNx metal gate in MOS devices
Ingår i Solid-State Electronics, s. 1410-1413, 2005
Metal gate work function extraction using Fowler-Nordheim tunneling techniques
Ingår i Microelectronic Engineering, s. 280-283, 2005
Ingår i Solid-State electronics, s. 907-914, 2005
Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes
Ingår i Microelectronic Engineering, s. 389-396, 2004
Ingår i Solid-State Electronics, s. 789-797, 2004
Modeling and characterization of capacitive coupling in trench-isolated structures on SOI substrates
Ingår i Solid-State Electronics, s. 43-49, 2004
Ingår i IEEE Transactions on Electron Devices, s. 790-796, 2004
Ingår i Solid-State Electronics, s. 1119-1126, 2004
A Novel Strained Si0.7Ge0.3 Surface-Channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 Gate Stack
Ingår i IEEE Electron Device Letters, s. 171-173, 2003
Small Signal and Power Evaluation of Novel BiCMOS -Compatible Short-Channel LDMOS Technology
Ingår i IEEE transactions on microwave theory and techniques, s. 1052-1056, 2003
On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
Ingår i IEEE Electron Device Letters, s. 550-552, 2003
Investigation of the electrical behavior of an asymmetric MOSFET
Ingår i Microelectronic Engineering, s. 428-438, 2003
Analysis of the Specific On-Resistance of Vertical High-Voltage DMOSFETs on SOI
Ingår i IEEE Transactions on Electron Devices, s. 1416-1419, 2003
Electrical Characterization of AlN MIS and MIM Structures
Ingår i IEEE Trans Electron Devices, s. 1214-1219, 2003
1 W/mm RF Power Denisty at 3.2 GHz for a Dual-Layer RESURF LDMOS Transistor
Ingår i IEEE Electron Device Letters, s. 206-208, 2002
Deposition of HfO2 thin films in HfI4-based processes
Ingår i Journal of the Electrochemical Society, 2002
Iodide-Based Atomic Layer Deposition of ZrO2: Aspects of Phase Stability and Dielectric Properties
Ingår i Chemical Vapor Deposition, s. 105-109, 2002
Analysis and Design of a Low-Voltage High-Frequency LDMOS Transistor
Ingår i IEEE Transactions on Electron Devices, s. 976-980, 2002
Drift Region Optimization of Lateral RESURF Devices
Ingår i Solid-State Electronics, s. 1177-1184, 2002
Chemical mechanical polishing for surface smoothing
Ingår i Physica Scripta, s. 200-202, 2002
Effect of dopants on chemical mechanical polishing of silicon
Ingår i Microelectronic Engineering, s. 149-155, 2002
Ingår i Journal of vacuum science and technology B, s. 855-861, 2002
Sub-Circuit Based SPICE Model for High Voltage LDMOS Transistors
Ingår i Physica Scripta, s. 7-9, 2002
Ingår i Solid-State Electronics, s. 2105-2110, 2002
Self Heating Effects of High Power SOI Vertical DMOS Transistors with Lateral Drain Contacts
Ingår i Physica Scripta, s. 38-41, 2002
Channel length extraction for DMOS transistors using capacitance-voltage measurements
Ingår i IEEE Trans on Electron Devices, s. 1454-1459, 2001
Integration of high voltage devices on thick SOI substrates for automotive applications
Ingår i Solid-State Electronics, s. 629-632, 2001
Self-heating effects in SOI bipolar transistors
Ingår i Microelectronic Engineering, s. 339-352, 2001
Membrane Covered Electrically Isolated Through-Wafer Via Hole
Ingår i J Micromech Microeng, s. 344-347, 2001
Electrical investigation of the silicon/diamond interface
Ingår i Microelectronic Engineering, s. 245-248, 1997
Electrical characterisation of silicon pn-junctions terminated with diamond
Ingår i Diamond and Related Materials, s. 1457-1461, 1996
Simulation of forward bias injection in proton irradiated silicon pn-junctions
Ingår i Solid-State Electronics, s. 1087-1092, 1996
Transient Measurements of Heat Distribution in Devices Fabricated on Silicon-On Diamond Material
Ingår i Japanese Journal of Applied Physics, s. 4706-4714, 1995
Vacancy related defect profiles in MeV cluster-ion irradiated silicon
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 233-236, 1995
High Current Gain Hybrid Lateral Bipolar Operation of DMOS Transistors
Ingår i IEEE Transactions on Electron Devices, s. 1628-1635, 1995
Ingår i The Journal of Physical Chemistry C, s. 5552-5556, 1994
Very High Current Gain Enhancement by Substrate Biasing of Lateral Bipolar Transistors on Thin SOI
Ingår i Microelectronic Engineering, s. 379-382, 1993
A Self-Aligned Lateral Bipolar Transistor Concept Realized on SIMOX-material
Ingår i IEEE Transactions on Electron Devices, s. 2359-2360, 1993
Investigation of the Current-Voltage Behavior of a Combined Schottky-p-n diode
Ingår i Solid-State Electronics, s. 1229-1231, 1992
Doktorsavhandlingar, sammanläggning
Kapitel i böcker, delar av antologi
High-Voltage SOI Devices for Automotive Applications
Ingår i Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment, s. 155-166, Kluwer Academic Publishers, The Netherlands, 2005
Konferensbidrag
2018
Implementation of a Highly Efficient Solid State RF Power Source for Superconducting Cavities
2018
Time domain characterization of high power RFpulsed solid state amplifiers for linear accelerators
2016
2016
Ingår i Proceedings EUROSOI-ULIS, s. 33-36, 2015
Stress and reliability of integrated RF-LDMOS transistors
Ingår i CSTIC, 2015
LDMOS with over 0.3 W/mm output power at 8 GHz integrated in 65nm CMOS
Ingår i Proceedings of GigaHertz Symposium, s. 73, 2014
High-temperature behaviour of capped Ag/Ta and Ag/TaN metal stacks
s. 137-138, 2014
Modeling Ga-profiles for Cu(In,Ga)Se2 thin film solar cells with varying defect density
Ingår i 23rd International Photovoltaic Science and Engineering Conference; Taipei, Taiwan; October 28 - Nov 1, 2013, 2013
RF losses, crosstalk and temperature dependence for SOI and Si/SiC hybrid substrates
Ingår i Proceedings of EUROSOI2013, 2013
A +32.8 dBm LDMOS power amplifier for WLAN in 65 nm CMOS technology
Ingår i 2013 8th European Microwave Integrated Circuits Conference Proceedings, s. 53-56, 2013
The future of solid-state transistors
Ingår i TIARA workshop, 2013
Ingår i Proc. of EUROSOI 2012 workshop: VIII workshop on silicon on insulator technology, devices and circuits, Jan 23-25, Montpellier, France, s. 31-32, 2012
LDMOS transistors on 150 mm silicon-on-polycrystalline-silicon carbide hybrid substrates
Ingår i Proc. of EUROSOI 2011 workshop, s. 153-154, 2011
Mobility Profiles and Thermal Characterization of SOI and Si-on-SiC hybrid substrates
Ingår i 2011 IEEE International SOI Conference Proceedings, 2011
Ingår i 2010 IEEE International SOI Conference Proceedings, Oct 11-14, San Diego CA, s. 115-116, 2010
Enhanced drift in RF-power LDMOS transistors under pulsed stress conditions
Ingår i Proc. of German Microwave Conference 2010, 2010 Mar 15-17, Berlin, Germany, s. 182-185, 2010
150 mm Silicon-on-polycrystalline-Silicon Carbide
Ingår i Proceedings of EUROSOI, s. 101-102, 2010
Drift in thin film SOI piezoresistors
Ingår i Proc. of EUROSOI Workshop, 2010 Jan 25-27, Grenoble, France, s. 71-72, 2010
Increased efficiency in RF-power SOI-LDMOS transistors
Ingår i Proceedings of EUROSOI, s. 117-118, 2009
A Load-Pull Based Device Evaluation Method for Bias Modulated Applications
Ingår i Proc EuMC 2009, s. 1461-1464, 2009
A Novel Load-Pull Setup with Envelope Calibration for Bias Modulated Measurements
Ingår i Proc EuMC 2009, s. 942-945, 2009
Study of Oxygen Out-diffusion from buried oxide layers in Si/SiC hybrid- and SOI-substrates
Ingår i EUROSOI 2009 CONFERENCE PROCEEDINGS, s. 85-86, 2009
Ingår i Proceedings of IEEE SOI conference, 2009
Ingår i Proceedings of Eurosensors May 2009, Procedia Chemistry vol 1 (1), s. 80-83, 2009
Thermal characterization of Silicon-on-SiC substrates
Ingår i Proceedings of IEEE International SOI Conference, s. 69-70, 2008
Thick Silicides Synthesised With Smooth Surface for Integrated TFBAR Applications
Ingår i 2008 European Frequency and Time Forum, Toulouse, France, 2008
High Efficiency using Optimized SOI-Substrates
Ingår i Proceedings of GigaHertz Symposium, s. 94, 2008
Oxide free wafer bonding of silicon-on-silicon carbide substrates
s. 95-96, 2008
Silicon-on-SiC hybrid substrate with low RF-losses and improved thermal performance
Ingår i Proceedings of GHz Symposium, s. 79, 2008
Ingår i Proceedings of ULIS, s. 175-178, 2008
Silicon-on-SiC hybrid substrate with improved high-frequency and thermal performance
s. 51-52, 2008
Improved Thermal Characteristics in SOI using a Buried Aluminium Nitride Insulator
Ingår i EUROSOI Workshop, s. 97-98, 2008
Oxide-Free Silicon to Silicon Carbide Heterobond
2008
Buried aluminum nitride insulator for improving thermal conduction in SOI
Ingår i Proceedings of IEEE SOI Conference, s. 105-106, 2008
Ingår i Proceedings of the 3rd European Microwave Integrated Circuits Conference, 2008
A computational load-Pull Investigation of Harmonic Loading effects on AM-PM conversion
Ingår i Proc of GHz symposium, s. 83, 2008
Optimisation of a smooth multilayer Nickel Silicide surface for ALN growth
2007
Novel Silicon-on-SiC Substrate with Superior Thermal and RF Performance
Ingår i Proceedings IEEE SOI conference, s. 115-116, 2007
High Power Efficiency using Very Low Resistivity SOI
2007
Buried Aluminum Nitride Insulator for SOI Substrates
Ingår i Proc. of EUROSOI Workshop, s. 67-68, 2007
Ingår i Presented at Int. Conf. on Micro- and Nano-Engineering, 2006
Ingår i Proceedings of 28th International Conference on the Physics of Semiconductors (ICPS), 2006
Impact of Al-, Ni-, TiN-, and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-K dielectrics
2006
Low Resistivity SOI for Improved Efficiency of LDMOS
Ingår i Proceedings of EUROSOI Workshop, March, s. 69-70, 2006
Design and implementation of an ultra high precision parametric mismatch measurement system
Ingår i Proceedings ICMTS, s. 149-154, 2005
Crosstalk Reduction Using Low Resistivity SOI
Ingår i Proceedings of EUROSOI Workshop, s. 129-130, 2005
Efficient Crosstalk Reduction Using Very Low Resistivity SOI Substrate
Ingår i Proceedings of 35th ESSDERC, s. 233-236, 2005
Analysis of crosstalk in SOI substrates
Ingår i Proceedings of GHz2005 Symposium, s. 131-134, 2005
Improved Efficiency for RF Power-MOSFETs using Low Resistivity SOI Substrates
Ingår i Proceedings of GHz2005 Symposium, s. 135-138, 2005
Metal gate work function extraction using Fowler-Nordheim tunneling techniques
Ingår i INFOS 2005, 2005
Investigation of Ta2O5 thin film MIM capacitors in the RF regime
Ingår i Proceedings of GHz2005 Symposium, s. 311-314, 2005
An accurate direct extraction technique for the MBVD resonator model
Ingår i Proceedings of 34th European Microwave Conference, s. 1241-1244, 2004
Low Resistivity SOI Substrates for Improved Efficiency of RF Power-MOSFETs
Ingår i Proc of NATO Advanced Research Workshop on SOI, Kiev 25-29 April, 2004
High-Voltage SOI Devices for Automotive Applications
Ingår i Proc of NATO Advanced Research Workshop on SOI, Kiev, Russia, 25-29 April. Invited, 2004
Substrate Resistance Modeling for Noise Coupling Analysis
Ingår i Proceedings of the IEEE International Conference on Microelectronic Teststructures, s. 124-129, 2003
Ingår i Proceedings of ESSDERC, s. 525-528, 2003
Simulation and modeling of the substrate influence on the high frequency performance for RF LDMOS
Ingår i GHz2003 Symposium, Nov. 4-5, 2003
Analysis and improvments of high frequency substrate losses for RF MOSFETs
Ingår i Proceedings of IEEE SISPAD, s. 319-322, 2003
ALD metal-gate/high-k gate stack for Si and Si0.7Ge0.3 surface-channel pMOSFETs
Ingår i Proceedings of 33th ESSDERC2003, s. 263-266, 2003
Flatband Voltage Adjustment USing Reactively Sputtered TiN Metal Gates
Ingår i Proc. of the AVS 4th International Conference on Microelectronics & Interfaces, Santa Clara, USA, s. 215-217, 2003
Novel BiCMOS Compatible, Short Channel LDMOS Technology for Medium Voltage RF & Power Applications
Ingår i IEEE MTT-S Digest, s. 35-39, 2002
Comparison Between Si-LDMOS and GaN-Based Microwave Power Transistors
Ingår i Proc of IEEE Lester Eastman Conference on High Performance Devices, s. 149-154, 2002
Investigation of ALCVD TM TiN/Al2O3/HfAlOx/Al2O3 stack on epitaxial Si and Si0.7Ge0.3
Ingår i IEEE SISC, December, 2002
Vertical High Voltage Devices on Thick SOI with Back-End Trench Formation
Ingår i Proc of the 32nd ESSDERC’2002, pp. 295-298, 2002
Ingår i Presented at the Franco-Swedish Workshop on SOI, March 8-9, Grenoble, France, 2001
High Voltage LDMOS Transistors for Increasing RF Power Density and Gain
Ingår i GHz2001 Symposium, Nov. 26-27, 2001
Effect of Dopants on Mechanical Polishing of Silicon
Ingår i Proceedings of MAM2001, p. O4.4, March 5-7, Sigtuna Sweden, 2001
Self Heating Effects of High Power DMOS Transistors
Ingår i Presented at the Franco-Swedish Workshop on SOI, March 8-9, Grenoble, France, 2001
Chemical Mechanical Polishing for Surface Smoothing
Ingår i The 19th Nordic Semiconductor Meeting, Copenhagen, Denmark, May 20-23, 2001
SPICE Modeling of High Voltage LDMOS Transistors
Ingår i The 19th Nordic Semiconductor Meeting, Copenhagen, Denmark, May, 2001
Electrical Characterization of Thin Ta2O5 Films
Ingår i The 19th Nordic Semiconductor Meeting, Copenhagen, Denmark, May, 2001
Modelling of Self Heating Effects of High Power Novel Vertical DMOS Transistors
Ingår i The 19th Nordic Semiconductor Meeting, Copenhagen, Denmark, May, 2001
Integrated capacitors using reactive DC magnetron Co-sputtered (Ta2O5)1-x(TiO2)x thin films
Ingår i The AVS 2nd International Conference on Microelectronics & Interfaces, Santa Clara, USA, 2001
Substitutional Effects of the Dielectric Constant in Ta2O5
Ingår i Presented at AVS, Oct, 2001
Improved output conductance for low-voltage microwave LDMOS transistors
Ingår i Proc of the 30th ESSDERC´2000, s. 468-471, 2000
Power Characteristics of High Voltage LDMOS Transistors
Ingår i Proceedings of the IEEE European Microwave Conference, 2000
Membrane covered electrically isolated through-wafer via hole
Ingår i Workshop Digest MME'00, Uppsala, Sweden, 2000
Integration of high voltage devices on thick SOI substrates for automotive application
Ingår i Proceedings of the EUROSOI’2000, Oct. 25-27, Granada, Spain, 2000
Output power characteristics of high voltage LDMOS transistors
Ingår i Proc of the GHz2000 Symposium, March 13-14, Gothenburg, Sweden, s. 75-78, 2000
Simulation of SOI MOSFETs at GHz-frequencies
Ingår i Proceedings of the GHz2000 Symposium, pp. 399-402, Gothenburg March 13-14, Sweden, 2000
Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials
Ingår i MRS conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium., 1999
An On-Wafer De-Embedding Technique for Silicon Transistors at Microwave Frequencies
Ingår i IEEE ICMTS, Gothenburg, Sweden, 1999
A Capacitance-Voltage Measurement Method for DMOS Transistor Channel Length Extraction
Ingår i Proc. of IEEE ICMTS, s. 135-140, 1999
A CMOS Compatible Power MOSFET for Low Voltage GHz Operation
Ingår i IEEE European Microwave Conf vol 2, s. 21-24, 1999
An empirical high frequency large signal model for high voltage LDMOS transistors
Ingår i Proceedings of the IEEE European Microwave Conference, Vol.1, s. 733-738, 1998
Properties of the Drift Region in a LDMOS Transistor
Ingår i The 18th Nordic Semiconductor Meeting, Linköping, Sweden, June, 1998
Modeling of Fringe Capacitances in the Oxide and the Depletion Region of a MOS Structure
Ingår i Proc of the 3rd Micro Structure Workshop, Uppsala March 24-25, 27.1, 1998
Integration of diamond and silicon for electronic materials
Ingår i the MRS fall meeting, Symposium D-Integration of Dissimilar Materials in Micro- and Optoelectronics, Boston, MA, USA, Dec, 1998
Investigation of the Effect of Impurities in Slurries Used for Chemical Mechanical Polishing
Ingår i The 18th Nordic Semiconductor Meeting, Linköping, Sweden, June 7-10, p. E-70, 1998
Electrical investigation of the silicon/diamond interface
1997
A Novel High-Frequency High-Voltage LDMOS Transistor using an Extended Gate RESURF Technology
Ingår i ISPSD´97, s. 45-48, 1997
Modelling of the Gate Capacitance Behaviour of a High-Frequency Small-Signal LDMOS Transistor
Ingår i GigaHertz´97 in Kista, Sweden, s. 96-97, 1997
BESOI materials with diamond or aluminium as buried insulator
Ingår i DERA workshop on Novel Silicon-On-Insulator Materials and Applications, April 17-18, Malvern, UK, 1997
Colloidal Silica as a Final Polishing Slurry
Ingår i CMP´97. 4-5, s. 244-245, 1997
Electrical Properties of the Silicon/Diamond Interface
Ingår i Presented at the 17th Nordic Semiconductor Meeting, Norway, June, 1996
A New High Voltage DMOS Transistor for Microwave Applications
Ingår i The 17th Nordic Semicondustor Meeting, Norway, June, 1996
A new self aligned asymmetric lateral bipolar transistor
Ingår i The 17th Nordic Semiconductor Meeting, Norway, June, 1996
A High-Voltage Giga-Hertz DMOS Transistor Integrated into a Standard CMOS Process
Ingår i GigaHertz´95, National symposium on -wave technology and high speed electronics, 1995
Integration of a Novel High-Voltage Giga-Hertz DMOS Transistor into a Standard CMOS Process
Ingår i IEEE IEDM Technical Digest, s. 975-978, 1995
Simulation of the electrical and thermal behaviour of SOI/SOD devices
1994
Steady State and Transient Thermal Characterization of Silicon on Diamond Materials
Ingår i Presented at the 16th Nordic Semiconductor Meeting, 1994
High Current Gain Lateral Bipolar Action in DMOS Transistors
Ingår i Proceedings of ESSDERC, s. 221-224, 1994
Ingår i MEMS, 1993
Ingår i Proceedings of ESSDERC, s. 227-230, 1993
Silicon on Diamond Heat Sinks by Bonding and Etch Back
Ingår i Proceedings of IEEE International SOI Conference, s. 58-59, 1993
Very High Current Gain Enhancement by Substrate Biasing of Lateral Bipolar Transistors on Thin SOI
Ingår i Infos, 1993
Formation of heat sinks using bonding and etch back technique in combination with diamond deposition
Ingår i Proceedings of 2nd Int. Symp. on Semiconductor Wafer Bonding, s. 382, 1993
A Lateral Bipolar Transistor Concept Tested on SIMOX- and BSOI-Materials
Ingår i Proceednings IEEE International SOI Conference, s. 76-77, 1992
Activation of Sb in Ultra-Shallow poly-silicon emitter using rapid thermal processing
Ingår i Proc. Mat. Res. Soc. Symp., s. 317-322, 1989