Jörgen Olsson
Professor vid Institutionen för materialvetenskap; Administration och service
- Mobiltelefon:
- 070-656 42 07
- E-post:
- jorgen.olsson@angstrom.uu.se
- Besöksadress:
- Ångströmlaboratoriet, Regementsvägen 10
- Postadress:
- Box 35
751 03 UPPSALA
Professor i fasta tillståndets elektronik vid Institutionen för materialvetenskap; Solcellsteknik
- Mobiltelefon:
- 070-656 42 07
- E-post:
- jorgen.olsson@angstrom.uu.se
- Besöksadress:
- Ångströmlaboratoriet, Regementsvägen 10
- Postadress:
- Box 35
751 03 UPPSALA
Ladda ned kontaktuppgifter för Jörgen Olsson vid Institutionen för materialvetenskap; Solcellsteknik
- Akademiska meriter:
- TeknD, Docent i teknisk fysik med inriktning mot elektronik
- CV:
- Ladda ned CV
- ORCID:
- 0000-0002-9882-4782
Kort presentation
- Prefekt, Institutionen för materialvetenskap
- Pedagogisk mentor
Biografi
Prof. Jörgen Olsson received the Ph.D. degree in electronics from Uppsala University, Sweden, in 1996. During 1997 he was a visiting scientist at Digital Semiconductor, Hudson, MA, USA, working on modeling of ion implantation and CMOS process integration. In 2008 he was promoted to Professor in Solid-State Electronics, Uppsala University. He was the head of the Solid State Device Group at the Ångström Laboratory, Uppsala University. His research interests include the fields of high-frequency MOS-based devices and processes, SOI-technology, and RF-power devices. Recent research is focused on thin-film solar cells. He is now Head of the department of materials science and engineering. He is author of over 180 scientific papers in international journals and conferences.
Publikationer
Urval av publikationer
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Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
Ingår i Solar Energy Materials and Solar Cells, 2020
- DOI för Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
- Ladda ner fulltext (pdf) av Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
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Ingår i IEEE Journal of Photovoltaics, s. 882-891, 2017
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Ingår i IEEE Journal of Photovoltaics, s. 1421-1425, 2017
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Advancing the understanding of reverse breakdown in Cu(In,Ga)Se2 solar cells
Ingår i IEEE Journal of Photovoltaics, s. 1136-1142, 2017
-
A New Latch-Free LIGBT on SOI with Very High Current Density and Low Drive Voltage
Ingår i Solid-State Electronics, s. 179-184, 2016
-
Ingår i Solar Energy Materials and Solar Cells, s. 364-370, 2016
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Ingår i IEEE transactions on device and materials reliability, s. 191-197, 2015
-
Ingår i Journal of Physics D, s. 485104, 2014
- DOI för Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect models
- Ladda ner fulltext (pdf) av Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect models
-
LDMOS with over 0.3 W/mm output power at 8 GHz integrated in 65nm CMOS
Ingår i Proceedings of GigaHertz Symposium, s. 73, 2014
-
Modeling Ga-profiles for Cu(In,Ga)Se2 thin film solar cells with varying defect density
Ingår i 23rd International Photovoltaic Science and Engineering Conference; Taipei, Taiwan; October 28 - Nov 1, 2013, 2013
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Ingår i The Journal of Physical Chemistry C, s. 5552-5556, 1994
Senaste publikationer
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Kilowatt Power Amplifier With Improved Power Back-Off Efficiency for Cyclotron Application
Ingår i IEEE Transactions on Microwave Theory and Techniques, s. 1401-1409, 2022
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Taper Transmission Line Based Measurement—An Thru-Only De-Embedding Approach
Ingår i IEEE transactions on microwave theory and techniques, s. 4199-4210, 2022
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An improved analytical model for broadside coupled transmission line used on planar circuit
Ingår i AEU - International Journal of Electronics and Communications, 2021
- DOI för An improved analytical model for broadside coupled transmission line used on planar circuit
- Ladda ner fulltext (pdf) av An improved analytical model for broadside coupled transmission line used on planar circuit
-
Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
Ingår i Solar Energy Materials and Solar Cells, 2020
- DOI för Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
- Ladda ner fulltext (pdf) av Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
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Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
Ingår i Review of Scientific Instruments, 2019
- DOI för Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
- Ladda ner fulltext (pdf) av Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
Alla publikationer
Artiklar i tidskrift
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Kilowatt Power Amplifier With Improved Power Back-Off Efficiency for Cyclotron Application
Ingår i IEEE Transactions on Microwave Theory and Techniques, s. 1401-1409, 2022
-
Taper Transmission Line Based Measurement—An Thru-Only De-Embedding Approach
Ingår i IEEE transactions on microwave theory and techniques, s. 4199-4210, 2022
-
An improved analytical model for broadside coupled transmission line used on planar circuit
Ingår i AEU - International Journal of Electronics and Communications, 2021
- DOI för An improved analytical model for broadside coupled transmission line used on planar circuit
- Ladda ner fulltext (pdf) av An improved analytical model for broadside coupled transmission line used on planar circuit
-
Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
Ingår i Solar Energy Materials and Solar Cells, 2020
- DOI för Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
- Ladda ner fulltext (pdf) av Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
-
Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
Ingår i Review of Scientific Instruments, 2019
- DOI för Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
- Ladda ner fulltext (pdf) av Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
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Protein sensing beyond the Debye Length Using Graphene Field-effect Transistors
Ingår i IEEE Sensors Journal, s. 6497-6503, 2018
- DOI för Protein sensing beyond the Debye Length Using Graphene Field-effect Transistors
- Ladda ner fulltext (pdf) av Protein sensing beyond the Debye Length Using Graphene Field-effect Transistors
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Ingår i Microwave and optical technology letters (Print), s. 163-171, 2018
- DOI för Time Domain Characterization of High Power Solid State Amplifiers for the Next Generation Linear Accelerators
- Ladda ner fulltext (pdf) av Time Domain Characterization of High Power Solid State Amplifiers for the Next Generation Linear Accelerators
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Interface Dependent Effective Mobility in Graphene Field Effect Transistors
Ingår i Journal of Electronic Materials, s. 1757-1761, 2018
- DOI för Interface Dependent Effective Mobility in Graphene Field Effect Transistors
- Ladda ner fulltext (pdf) av Interface Dependent Effective Mobility in Graphene Field Effect Transistors
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Ingår i IEEE Journal of Photovoltaics, s. 882-891, 2017
-
Ingår i IEEE Journal of Photovoltaics, s. 1421-1425, 2017
-
Advancing the understanding of reverse breakdown in Cu(In,Ga)Se2 solar cells
Ingår i IEEE Journal of Photovoltaics, s. 1136-1142, 2017
-
Mobility and charge transport mechanisms of a field grading material
Ingår i IEEE transactions on dielectrics and electrical insulation, 2017
-
Power Performance of 65 nm CMOS Integrated LDMOS Transistors at WLAN and X-band Frequencies
Ingår i International journal of microwave and wireless technologies, s. 135-141, 2016
-
A New Latch-Free LIGBT on SOI with Very High Current Density and Low Drive Voltage
Ingår i Solid-State Electronics, s. 179-184, 2016
-
Ingår i Solar Energy Materials and Solar Cells, s. 364-370, 2016
-
Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures
Ingår i Journal of Vacuum Science & Technology B, 2016
- DOI för Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures
- Ladda ner fulltext (pdf) av Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures
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Ingår i IEEE transactions on device and materials reliability, s. 191-197, 2015
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Ingår i Microelectronic Engineering, s. 37-42, 2015
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A two-in-one process for reliable graphene transistors processed with photolithography
Ingår i Applied Physics Letters, 2015
- DOI för A two-in-one process for reliable graphene transistors processed with photolithography
- Ladda ner fulltext (pdf) av A two-in-one process for reliable graphene transistors processed with photolithography
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Ingår i Journal of Electronic Materials, s. 541-547, 2014
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Thermal characterization of polycrystalline SiC
Ingår i Journal of Electronic Materials, s. 1150-1153, 2014
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Electrical properties of Ag/Ta and Ag/TaN thin-films
Ingår i Microelectronic Engineering, s. 257-261, 2014
- DOI för Electrical properties of Ag/Ta and Ag/TaN thin-films
- Ladda ner fulltext (pdf) av Electrical properties of Ag/Ta and Ag/TaN thin-films
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RF losses, crosstalk and temperature dependence for SOI and Si/SiC hybrid substrates
Ingår i Solid-State Electronics, s. 59-65, 2014
-
Ingår i Journal of Physics D, s. 485104, 2014
- DOI för Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect models
- Ladda ner fulltext (pdf) av Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect models
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Morphological instability of Ag films caused by phase transition in the underlying Ta barrier layer
Ingår i Applied Physics Letters, 2014
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Fabrication and Characterization of 150 mm Silicon-on-polycrystalline-Silicon Carbide Substrates
Ingår i Journal of Electronic Materials, s. 480-487, 2012
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Ingår i Solid-State Electronics, s. 14-19, 2012
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Electrical characterization of wurtzite (Al,B)N thin films
Ingår i Vacuum, s. 466-470, 2011
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Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors
Ingår i Solid-State Electronics, s. 171-177, 2010
-
Oxygen out-diffusion from buried layers in SOI and SiC-SOI substrates
Ingår i Solid-State Electronics, s. 153-157, 2010
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Investigation of SOI-LDMOS for RF-power applications using Computational Load-Pull
Ingår i IEEE Transactions on Electron Devices, s. 505-511, 2009
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A Computational Load-Pull Method with Harmonic Loading for High-Efficiency Investigations
Ingår i Solid-State Electronics, s. 86-94, 2009
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Thick NiSi Electrodes for AlN Electroacoustic Applications
Ingår i Electrochemical and solid-state letters, 2009
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Optimisation of a smooth multilayer Nickel Silicide surface for ALN growth
Ingår i Journal of Physics, Conference Series, 2008
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Oxide-Free Silicon to Silicon Carbide Heterobond
Ingår i ESC Transactions, s. 377-383, 2008
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Ingår i Solid-State Electronics, s. 1024-1031, 2008
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SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation
Ingår i IEEE Electron Device Letters, s. 125-127, 2008
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Ingår i Microelectronic Engineering, s. 1635-1638, 2007
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Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-k dielectrics
Ingår i Microelectronics and reliability, s. 536-539, 2007
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Anisotropic dry etching of boron doped single crystal CVD diamond
Ingår i Carbon, s. 1839-1842, 2005
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Low Resistivity SOI for Substrate Crosstalk Reduction
Ingår i IEEE Transactions on Electron Devices, s. 1920-1922, 2005
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Investigation of the Thermal Stability of Reactively Sputter Deposited TiN MOS Gate Electrodes
Ingår i IEEE Transactions on Electron Devices, s. 2349-2352, 2005
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Low-resistivity ZrNx metal gate in MOS devices
Ingår i Solid-State Electronics, s. 1410-1413, 2005
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Metal gate work function extraction using Fowler-Nordheim tunneling techniques
Ingår i Microelectronic Engineering, s. 280-283, 2005
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Ingår i Solid-State electronics, s. 907-914, 2005
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Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes
Ingår i Microelectronic Engineering, s. 389-396, 2004
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Ingår i Solid-State Electronics, s. 789-797, 2004
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Modeling and characterization of capacitive coupling in trench-isolated structures on SOI substrates
Ingår i Solid-State Electronics, s. 43-49, 2004
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Ingår i IEEE Transactions on Electron Devices, s. 790-796, 2004
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Ingår i Solid-State Electronics, s. 1119-1126, 2004
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A Novel Strained Si0.7Ge0.3 Surface-Channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 Gate Stack
Ingår i IEEE Electron Device Letters, s. 171-173, 2003
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Small Signal and Power Evaluation of Novel BiCMOS -Compatible Short-Channel LDMOS Technology
Ingår i IEEE transactions on microwave theory and techniques, s. 1052-1056, 2003
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On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
Ingår i IEEE Electron Device Letters, s. 550-552, 2003
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Investigation of the electrical behavior of an asymmetric MOSFET
Ingår i Microelectronic Engineering, s. 428-438, 2003
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Analysis of the Specific On-Resistance of Vertical High-Voltage DMOSFETs on SOI
Ingår i IEEE Transactions on Electron Devices, s. 1416-1419, 2003
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Electrical Characterization of AlN MIS and MIM Structures
Ingår i IEEE Trans Electron Devices, s. 1214-1219, 2003
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1 W/mm RF Power Denisty at 3.2 GHz for a Dual-Layer RESURF LDMOS Transistor
Ingår i IEEE Electron Device Letters, s. 206-208, 2002
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Deposition of HfO2 thin films in HfI4-based processes
Ingår i Journal of the Electrochemical Society, 2002
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Iodide-Based Atomic Layer Deposition of ZrO2: Aspects of Phase Stability and Dielectric Properties
Ingår i Chemical Vapor Deposition, s. 105-109, 2002
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Analysis and Design of a Low-Voltage High-Frequency LDMOS Transistor
Ingår i IEEE Transactions on Electron Devices, s. 976-980, 2002
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Drift Region Optimization of Lateral RESURF Devices
Ingår i Solid-State Electronics, s. 1177-1184, 2002
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Chemical mechanical polishing for surface smoothing
Ingår i Physica Scripta, s. 200-202, 2002
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Effect of dopants on chemical mechanical polishing of silicon
Ingår i Microelectronic Engineering, s. 149-155, 2002
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Ingår i Journal of vacuum science and technology B, s. 855-861, 2002
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Sub-Circuit Based SPICE Model for High Voltage LDMOS Transistors
Ingår i Physica Scripta, s. 7-9, 2002
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Ingår i Solid-State Electronics, s. 2105-2110, 2002
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Self Heating Effects of High Power SOI Vertical DMOS Transistors with Lateral Drain Contacts
Ingår i Physica Scripta, s. 38-41, 2002
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Channel length extraction for DMOS transistors using capacitance-voltage measurements
Ingår i IEEE Trans on Electron Devices, s. 1454-1459, 2001
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Integration of high voltage devices on thick SOI substrates for automotive applications
Ingår i Solid-State Electronics, s. 629-632, 2001
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Self-heating effects in SOI bipolar transistors
Ingår i Microelectronic Engineering, s. 339-352, 2001
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Membrane Covered Electrically Isolated Through-Wafer Via Hole
Ingår i J Micromech Microeng, s. 344-347, 2001
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Electrical investigation of the silicon/diamond interface
Ingår i Microelectronic Engineering, s. 245-248, 1997
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Electrical characterisation of silicon pn-junctions terminated with diamond
Ingår i Diamond and Related Materials, s. 1457-1461, 1996
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Simulation of forward bias injection in proton irradiated silicon pn-junctions
Ingår i Solid-State Electronics, s. 1087-1092, 1996
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Transient Measurements of Heat Distribution in Devices Fabricated on Silicon-On Diamond Material
Ingår i Japanese Journal of Applied Physics, s. 4706-4714, 1995
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Vacancy related defect profiles in MeV cluster-ion irradiated silicon
Ingår i Nuclear Instruments and Methods in Physics Research Section B, s. 233-236, 1995
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High Current Gain Hybrid Lateral Bipolar Operation of DMOS Transistors
Ingår i IEEE Transactions on Electron Devices, s. 1628-1635, 1995
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Ingår i The Journal of Physical Chemistry C, s. 5552-5556, 1994
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Very High Current Gain Enhancement by Substrate Biasing of Lateral Bipolar Transistors on Thin SOI
Ingår i Microelectronic Engineering, s. 379-382, 1993
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A Self-Aligned Lateral Bipolar Transistor Concept Realized on SIMOX-material
Ingår i IEEE Transactions on Electron Devices, s. 2359-2360, 1993
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Investigation of the Current-Voltage Behavior of a Combined Schottky-p-n diode
Ingår i Solid-State Electronics, s. 1229-1231, 1992
Doktorsavhandlingar, sammanläggning
Kapitel i böcker, delar av antologi
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High-Voltage SOI Devices for Automotive Applications
Ingår i Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment, s. 155-166, Kluwer Academic Publishers, The Netherlands, 2005
Konferensbidrag
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2018
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Implementation of a Highly Efficient Solid State RF Power Source for Superconducting Cavities
2018
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Time domain characterization of high power RFpulsed solid state amplifiers for linear accelerators
2016
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2016
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Ingår i Proceedings EUROSOI-ULIS, s. 33-36, 2015
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Stress and reliability of integrated RF-LDMOS transistors
Ingår i CSTIC, 2015
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LDMOS with over 0.3 W/mm output power at 8 GHz integrated in 65nm CMOS
Ingår i Proceedings of GigaHertz Symposium, s. 73, 2014
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High-temperature behaviour of capped Ag/Ta and Ag/TaN metal stacks
s. 137-138, 2014
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Modeling Ga-profiles for Cu(In,Ga)Se2 thin film solar cells with varying defect density
Ingår i 23rd International Photovoltaic Science and Engineering Conference; Taipei, Taiwan; October 28 - Nov 1, 2013, 2013
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RF losses, crosstalk and temperature dependence for SOI and Si/SiC hybrid substrates
Ingår i Proceedings of EUROSOI2013, 2013
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A +32.8 dBm LDMOS power amplifier for WLAN in 65 nm CMOS technology
Ingår i 2013 8th European Microwave Integrated Circuits Conference Proceedings, s. 53-56, 2013
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The future of solid-state transistors
Ingår i TIARA workshop, 2013
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Ingår i Proc. of EUROSOI 2012 workshop: VIII workshop on silicon on insulator technology, devices and circuits, Jan 23-25, Montpellier, France, s. 31-32, 2012
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LDMOS transistors on 150 mm silicon-on-polycrystalline-silicon carbide hybrid substrates
Ingår i Proc. of EUROSOI 2011 workshop, s. 153-154, 2011
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Mobility Profiles and Thermal Characterization of SOI and Si-on-SiC hybrid substrates
Ingår i 2011 IEEE International SOI Conference Proceedings, 2011
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Ingår i 2010 IEEE International SOI Conference Proceedings, Oct 11-14, San Diego CA, s. 115-116, 2010
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Enhanced drift in RF-power LDMOS transistors under pulsed stress conditions
Ingår i Proc. of German Microwave Conference 2010, 2010 Mar 15-17, Berlin, Germany, s. 182-185, 2010
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150 mm Silicon-on-polycrystalline-Silicon Carbide
Ingår i Proceedings of EUROSOI, s. 101-102, 2010
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Drift in thin film SOI piezoresistors
Ingår i Proc. of EUROSOI Workshop, 2010 Jan 25-27, Grenoble, France, s. 71-72, 2010
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Increased efficiency in RF-power SOI-LDMOS transistors
Ingår i Proceedings of EUROSOI, s. 117-118, 2009
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A Load-Pull Based Device Evaluation Method for Bias Modulated Applications
Ingår i Proc EuMC 2009, s. 1461-1464, 2009
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A Novel Load-Pull Setup with Envelope Calibration for Bias Modulated Measurements
Ingår i Proc EuMC 2009, s. 942-945, 2009
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Study of Oxygen Out-diffusion from buried oxide layers in Si/SiC hybrid- and SOI-substrates
Ingår i EUROSOI 2009 CONFERENCE PROCEEDINGS, s. 85-86, 2009
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Ingår i Proceedings of IEEE SOI conference, 2009
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Ingår i Proceedings of Eurosensors May 2009, Procedia Chemistry vol 1 (1), s. 80-83, 2009
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Thermal characterization of Silicon-on-SiC substrates
Ingår i Proceedings of IEEE International SOI Conference, s. 69-70, 2008
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Thick Silicides Synthesised With Smooth Surface for Integrated TFBAR Applications
Ingår i 2008 European Frequency and Time Forum, Toulouse, France, 2008
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High Efficiency using Optimized SOI-Substrates
Ingår i Proceedings of GigaHertz Symposium, s. 94, 2008
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Oxide free wafer bonding of silicon-on-silicon carbide substrates
s. 95-96, 2008
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Silicon-on-SiC hybrid substrate with low RF-losses and improved thermal performance
Ingår i Proceedings of GHz Symposium, s. 79, 2008
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Ingår i Proceedings of ULIS, s. 175-178, 2008
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Silicon-on-SiC hybrid substrate with improved high-frequency and thermal performance
s. 51-52, 2008
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Improved Thermal Characteristics in SOI using a Buried Aluminium Nitride Insulator
Ingår i EUROSOI Workshop, s. 97-98, 2008
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Oxide-Free Silicon to Silicon Carbide Heterobond
2008
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Buried aluminum nitride insulator for improving thermal conduction in SOI
Ingår i Proceedings of IEEE SOI Conference, s. 105-106, 2008
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Ingår i Proceedings of the 3rd European Microwave Integrated Circuits Conference, 2008
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A computational load-Pull Investigation of Harmonic Loading effects on AM-PM conversion
Ingår i Proc of GHz symposium, s. 83, 2008
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Optimisation of a smooth multilayer Nickel Silicide surface for ALN growth
2007
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Novel Silicon-on-SiC Substrate with Superior Thermal and RF Performance
Ingår i Proceedings IEEE SOI conference, s. 115-116, 2007
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High Power Efficiency using Very Low Resistivity SOI
2007
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Buried Aluminum Nitride Insulator for SOI Substrates
Ingår i Proc. of EUROSOI Workshop, s. 67-68, 2007
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Ingår i Presented at Int. Conf. on Micro- and Nano-Engineering, 2006
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Ingår i Proceedings of 28th International Conference on the Physics of Semiconductors (ICPS), 2006
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Impact of Al-, Ni-, TiN-, and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-K dielectrics
2006
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Low Resistivity SOI for Improved Efficiency of LDMOS
Ingår i Proceedings of EUROSOI Workshop, March, s. 69-70, 2006
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Design and implementation of an ultra high precision parametric mismatch measurement system
Ingår i Proceedings ICMTS, s. 149-154, 2005
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Crosstalk Reduction Using Low Resistivity SOI
Ingår i Proceedings of EUROSOI Workshop, s. 129-130, 2005
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Efficient Crosstalk Reduction Using Very Low Resistivity SOI Substrate
Ingår i Proceedings of 35th ESSDERC, s. 233-236, 2005
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Analysis of crosstalk in SOI substrates
Ingår i Proceedings of GHz2005 Symposium, s. 131-134, 2005
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Improved Efficiency for RF Power-MOSFETs using Low Resistivity SOI Substrates
Ingår i Proceedings of GHz2005 Symposium, s. 135-138, 2005
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Metal gate work function extraction using Fowler-Nordheim tunneling techniques
Ingår i INFOS 2005, 2005
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Investigation of Ta2O5 thin film MIM capacitors in the RF regime
Ingår i Proceedings of GHz2005 Symposium, s. 311-314, 2005
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An accurate direct extraction technique for the MBVD resonator model
Ingår i Proceedings of 34th European Microwave Conference, s. 1241-1244, 2004
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Low Resistivity SOI Substrates for Improved Efficiency of RF Power-MOSFETs
Ingår i Proc of NATO Advanced Research Workshop on SOI, Kiev 25-29 April, 2004
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High-Voltage SOI Devices for Automotive Applications
Ingår i Proc of NATO Advanced Research Workshop on SOI, Kiev, Russia, 25-29 April. Invited, 2004
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Substrate Resistance Modeling for Noise Coupling Analysis
Ingår i Proceedings of the IEEE International Conference on Microelectronic Teststructures, s. 124-129, 2003
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Ingår i Proceedings of ESSDERC, s. 525-528, 2003
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Simulation and modeling of the substrate influence on the high frequency performance for RF LDMOS
Ingår i GHz2003 Symposium, Nov. 4-5, 2003
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Analysis and improvments of high frequency substrate losses for RF MOSFETs
Ingår i Proceedings of IEEE SISPAD, s. 319-322, 2003
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ALD metal-gate/high-k gate stack for Si and Si0.7Ge0.3 surface-channel pMOSFETs
Ingår i Proceedings of 33th ESSDERC2003, s. 263-266, 2003
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Flatband Voltage Adjustment USing Reactively Sputtered TiN Metal Gates
Ingår i Proc. of the AVS 4th International Conference on Microelectronics & Interfaces, Santa Clara, USA, s. 215-217, 2003
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Novel BiCMOS Compatible, Short Channel LDMOS Technology for Medium Voltage RF & Power Applications
Ingår i IEEE MTT-S Digest, s. 35-39, 2002
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Comparison Between Si-LDMOS and GaN-Based Microwave Power Transistors
Ingår i Proc of IEEE Lester Eastman Conference on High Performance Devices, s. 149-154, 2002
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Investigation of ALCVD TM TiN/Al2O3/HfAlOx/Al2O3 stack on epitaxial Si and Si0.7Ge0.3
Ingår i IEEE SISC, December, 2002
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Vertical High Voltage Devices on Thick SOI with Back-End Trench Formation
Ingår i Proc of the 32nd ESSDERC’2002, pp. 295-298, 2002
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Ingår i Presented at the Franco-Swedish Workshop on SOI, March 8-9, Grenoble, France, 2001
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High Voltage LDMOS Transistors for Increasing RF Power Density and Gain
Ingår i GHz2001 Symposium, Nov. 26-27, 2001
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Effect of Dopants on Mechanical Polishing of Silicon
Ingår i Proceedings of MAM2001, p. O4.4, March 5-7, Sigtuna Sweden, 2001
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Self Heating Effects of High Power DMOS Transistors
Ingår i Presented at the Franco-Swedish Workshop on SOI, March 8-9, Grenoble, France, 2001
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Chemical Mechanical Polishing for Surface Smoothing
Ingår i The 19th Nordic Semiconductor Meeting, Copenhagen, Denmark, May 20-23, 2001
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SPICE Modeling of High Voltage LDMOS Transistors
Ingår i The 19th Nordic Semiconductor Meeting, Copenhagen, Denmark, May, 2001
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Electrical Characterization of Thin Ta2O5 Films
Ingår i The 19th Nordic Semiconductor Meeting, Copenhagen, Denmark, May, 2001
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Modelling of Self Heating Effects of High Power Novel Vertical DMOS Transistors
Ingår i The 19th Nordic Semiconductor Meeting, Copenhagen, Denmark, May, 2001
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Integrated capacitors using reactive DC magnetron Co-sputtered (Ta2O5)1-x(TiO2)x thin films
Ingår i The AVS 2nd International Conference on Microelectronics & Interfaces, Santa Clara, USA, 2001
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Substitutional Effects of the Dielectric Constant in Ta2O5
Ingår i Presented at AVS, Oct, 2001
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Improved output conductance for low-voltage microwave LDMOS transistors
Ingår i Proc of the 30th ESSDERC´2000, s. 468-471, 2000
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Power Characteristics of High Voltage LDMOS Transistors
Ingår i Proceedings of the IEEE European Microwave Conference, 2000
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Membrane covered electrically isolated through-wafer via hole
Ingår i Workshop Digest MME'00, Uppsala, Sweden, 2000
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Integration of high voltage devices on thick SOI substrates for automotive application
Ingår i Proceedings of the EUROSOI’2000, Oct. 25-27, Granada, Spain, 2000
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Output power characteristics of high voltage LDMOS transistors
Ingår i Proc of the GHz2000 Symposium, March 13-14, Gothenburg, Sweden, s. 75-78, 2000
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Simulation of SOI MOSFETs at GHz-frequencies
Ingår i Proceedings of the GHz2000 Symposium, pp. 399-402, Gothenburg March 13-14, Sweden, 2000
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Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials
Ingår i MRS conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium., 1999
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An On-Wafer De-Embedding Technique for Silicon Transistors at Microwave Frequencies
Ingår i IEEE ICMTS, Gothenburg, Sweden, 1999
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A Capacitance-Voltage Measurement Method for DMOS Transistor Channel Length Extraction
Ingår i Proc. of IEEE ICMTS, s. 135-140, 1999
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A CMOS Compatible Power MOSFET for Low Voltage GHz Operation
Ingår i IEEE European Microwave Conf vol 2, s. 21-24, 1999
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An empirical high frequency large signal model for high voltage LDMOS transistors
Ingår i Proceedings of the IEEE European Microwave Conference, Vol.1, s. 733-738, 1998
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Properties of the Drift Region in a LDMOS Transistor
Ingår i The 18th Nordic Semiconductor Meeting, Linköping, Sweden, June, 1998
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Modeling of Fringe Capacitances in the Oxide and the Depletion Region of a MOS Structure
Ingår i Proc of the 3rd Micro Structure Workshop, Uppsala March 24-25, 27.1, 1998
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Integration of diamond and silicon for electronic materials
Ingår i the MRS fall meeting, Symposium D-Integration of Dissimilar Materials in Micro- and Optoelectronics, Boston, MA, USA, Dec, 1998
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Investigation of the Effect of Impurities in Slurries Used for Chemical Mechanical Polishing
Ingår i The 18th Nordic Semiconductor Meeting, Linköping, Sweden, June 7-10, p. E-70, 1998
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Electrical investigation of the silicon/diamond interface
1997
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A Novel High-Frequency High-Voltage LDMOS Transistor using an Extended Gate RESURF Technology
Ingår i ISPSD´97, s. 45-48, 1997
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Modelling of the Gate Capacitance Behaviour of a High-Frequency Small-Signal LDMOS Transistor
Ingår i GigaHertz´97 in Kista, Sweden, s. 96-97, 1997
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BESOI materials with diamond or aluminium as buried insulator
Ingår i DERA workshop on Novel Silicon-On-Insulator Materials and Applications, April 17-18, Malvern, UK, 1997
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Colloidal Silica as a Final Polishing Slurry
Ingår i CMP´97. 4-5, s. 244-245, 1997
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Electrical Properties of the Silicon/Diamond Interface
Ingår i Presented at the 17th Nordic Semiconductor Meeting, Norway, June, 1996
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A New High Voltage DMOS Transistor for Microwave Applications
Ingår i The 17th Nordic Semicondustor Meeting, Norway, June, 1996
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A new self aligned asymmetric lateral bipolar transistor
Ingår i The 17th Nordic Semiconductor Meeting, Norway, June, 1996
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A High-Voltage Giga-Hertz DMOS Transistor Integrated into a Standard CMOS Process
Ingår i GigaHertz´95, National symposium on -wave technology and high speed electronics, 1995
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Integration of a Novel High-Voltage Giga-Hertz DMOS Transistor into a Standard CMOS Process
Ingår i IEEE IEDM Technical Digest, s. 975-978, 1995
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Simulation of the electrical and thermal behaviour of SOI/SOD devices
1994
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Steady State and Transient Thermal Characterization of Silicon on Diamond Materials
Ingår i Presented at the 16th Nordic Semiconductor Meeting, 1994
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High Current Gain Lateral Bipolar Action in DMOS Transistors
Ingår i Proceedings of ESSDERC, s. 221-224, 1994
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Ingår i MEMS, 1993
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Ingår i Proceedings of ESSDERC, s. 227-230, 1993
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Silicon on Diamond Heat Sinks by Bonding and Etch Back
Ingår i Proceedings of IEEE International SOI Conference, s. 58-59, 1993
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Very High Current Gain Enhancement by Substrate Biasing of Lateral Bipolar Transistors on Thin SOI
Ingår i Infos, 1993
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Formation of heat sinks using bonding and etch back technique in combination with diamond deposition
Ingår i Proceedings of 2nd Int. Symp. on Semiconductor Wafer Bonding, s. 382, 1993
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A Lateral Bipolar Transistor Concept Tested on SIMOX- and BSOI-Materials
Ingår i Proceednings IEEE International SOI Conference, s. 76-77, 1992
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Activation of Sb in Ultra-Shallow poly-silicon emitter using rapid thermal processing
Ingår i Proc. Mat. Res. Soc. Symp., s. 317-322, 1989