Jörgen Olsson
Professor at Department of Materials Science and Engineering; Solar Cell Technology
- Telephone:
- +46 18 471 30 35
- Mobile phone:
- +46 70 656 42 07
- E-mail:
- jorgen.olsson@angstrom.uu.se
- Visiting address:
- Ångströmlaboratoriet, Regementsvägen 10
- Postal address:
- Box 35
751 03 UPPSALA
- CV:
- Download CV
- ORCID:
- 0000-0002-9882-4782
Short presentation
- Deputy head of department
- Director of postgraduate studies
- Chair Doctoral Education Board (FUN), Teknat
- Member of Teknat faculty Advisory committee for research (FB)
- Member of Teknat faculty Advisory committee for education (UB)
- Member of Teknat Equal Opportunities Committee (UB representative)
Biography
Prof. Jörgen Olsson received the Ph.D. degree in electronics from Uppsala University, Sweden, in 1996. During 1997 he was a visiting scientist at Digital Semiconductor, Hudson, MA, USA, working on modeling of ion implantation and CMOS process integration. In 2008 he was promoted to Professor in Solid-State Electronics, Uppsala University. He was the head of the Solid State Device Group at the Ångström Laboratory, Uppsala University. His research interests include the fields of high-frequency MOS-based devices and processes, SOI-technology, and RF-power devices. Recent research is focused on thin-film solar cells. He is also the director of postgraduate studies and the deputy head of the department of materials science and engineering. He is author of over 180 scientific papers in international journals and conferences.

Publications
Selection of publications
Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
Part of Solar Energy Materials and Solar Cells, 2020
- DOI for Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
- Download full text (pdf) of Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
Part of IEEE Journal of Photovoltaics, p. 882-891, 2017
Part of IEEE Journal of Photovoltaics, p. 1421-1425, 2017
Advancing the understanding of reverse breakdown in Cu(In,Ga)Se2 solar cells
Part of IEEE Journal of Photovoltaics, p. 1136-1142, 2017
A New Latch-Free LIGBT on SOI with Very High Current Density and Low Drive Voltage
Part of Solid-State Electronics, p. 179-184, 2016
Part of Solar Energy Materials and Solar Cells, p. 364-370, 2016
Part of IEEE transactions on device and materials reliability, p. 191-197, 2015
Part of Journal of Physics D, p. 485104, 2014
- DOI for Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect models
- Download full text (pdf) of Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect models
LDMOS with over 0.3 W/mm output power at 8 GHz integrated in 65nm CMOS
Part of Proceedings of GigaHertz Symposium, p. 73, 2014
Modeling Ga-profiles for Cu(In,Ga)Se2 thin film solar cells with varying defect density
Part of 23rd International Photovoltaic Science and Engineering Conference; Taipei, Taiwan; October 28 - Nov 1, 2013, 2013
Part of The Journal of Physical Chemistry C, p. 5552-5556, 1994
Recent publications
Kilowatt Power Amplifier With Improved Power Back-Off Efficiency for Cyclotron Application
Part of IEEE Transactions on Microwave Theory and Techniques, p. 1401-1409, 2022
Taper Transmission Line Based Measurement—An Thru-Only De-Embedding Approach
Part of IEEE transactions on microwave theory and techniques, p. 4199-4210, 2022
An improved analytical model for broadside coupled transmission line used on planar circuit
Part of AEU - International Journal of Electronics and Communications, 2021
- DOI for An improved analytical model for broadside coupled transmission line used on planar circuit
- Download full text (pdf) of An improved analytical model for broadside coupled transmission line used on planar circuit
Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
Part of Solar Energy Materials and Solar Cells, 2020
- DOI for Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
- Download full text (pdf) of Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
Part of Review of Scientific Instruments, 2019
- DOI for Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
- Download full text (pdf) of Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
All publications
Articles in journal
Kilowatt Power Amplifier With Improved Power Back-Off Efficiency for Cyclotron Application
Part of IEEE Transactions on Microwave Theory and Techniques, p. 1401-1409, 2022
Taper Transmission Line Based Measurement—An Thru-Only De-Embedding Approach
Part of IEEE transactions on microwave theory and techniques, p. 4199-4210, 2022
An improved analytical model for broadside coupled transmission line used on planar circuit
Part of AEU - International Journal of Electronics and Communications, 2021
- DOI for An improved analytical model for broadside coupled transmission line used on planar circuit
- Download full text (pdf) of An improved analytical model for broadside coupled transmission line used on planar circuit
Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
Part of Solar Energy Materials and Solar Cells, 2020
- DOI for Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
- Download full text (pdf) of Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells
Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
Part of Review of Scientific Instruments, 2019
- DOI for Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
- Download full text (pdf) of Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators
Protein sensing beyond the Debye Length Using Graphene Field-effect Transistors
Part of IEEE Sensors Journal, p. 6497-6503, 2018
Part of Microwave and optical technology letters (Print), p. 163-171, 2018
- DOI for Time Domain Characterization of High Power Solid State Amplifiers for the Next Generation Linear Accelerators
- Download full text (pdf) of Time Domain Characterization of High Power Solid State Amplifiers for the Next Generation Linear Accelerators
Interface Dependent Effective Mobility in Graphene Field Effect Transistors
Part of Journal of Electronic Materials, p. 1757-1761, 2018
- DOI for Interface Dependent Effective Mobility in Graphene Field Effect Transistors
- Download full text (pdf) of Interface Dependent Effective Mobility in Graphene Field Effect Transistors
Part of IEEE Journal of Photovoltaics, p. 882-891, 2017
Part of IEEE Journal of Photovoltaics, p. 1421-1425, 2017
Advancing the understanding of reverse breakdown in Cu(In,Ga)Se2 solar cells
Part of IEEE Journal of Photovoltaics, p. 1136-1142, 2017
Mobility and charge transport mechanisms of a field grading material
Part of IEEE transactions on dielectrics and electrical insulation, 2017
Power Performance of 65 nm CMOS Integrated LDMOS Transistors at WLAN and X-band Frequencies
Part of International journal of microwave and wireless technologies, p. 135-141, 2016
A New Latch-Free LIGBT on SOI with Very High Current Density and Low Drive Voltage
Part of Solid-State Electronics, p. 179-184, 2016
Part of Solar Energy Materials and Solar Cells, p. 364-370, 2016
Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures
Part of Journal of Vacuum Science & Technology B, 2016
- DOI for Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures
- Download full text (pdf) of Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures
Part of IEEE transactions on device and materials reliability, p. 191-197, 2015
Part of Microelectronic Engineering, p. 37-42, 2015
A two-in-one process for reliable graphene transistors processed with photolithography
Part of Applied Physics Letters, 2015
- DOI for A two-in-one process for reliable graphene transistors processed with photolithography
- Download full text (pdf) of A two-in-one process for reliable graphene transistors processed with photolithography
Part of Journal of Electronic Materials, p. 541-547, 2014
Thermal characterization of polycrystalline SiC
Part of Journal of Electronic Materials, p. 1150-1153, 2014
Electrical properties of Ag/Ta and Ag/TaN thin-films
Part of Microelectronic Engineering, p. 257-261, 2014
- DOI for Electrical properties of Ag/Ta and Ag/TaN thin-films
- Download full text (pdf) of Electrical properties of Ag/Ta and Ag/TaN thin-films
RF losses, crosstalk and temperature dependence for SOI and Si/SiC hybrid substrates
Part of Solid-State Electronics, p. 59-65, 2014
Part of Journal of Physics D, p. 485104, 2014
- DOI for Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect models
- Download full text (pdf) of Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect models
Morphological instability of Ag films caused by phase transition in the underlying Ta barrier layer
Part of Applied Physics Letters, 2014
Fabrication and Characterization of 150 mm Silicon-on-polycrystalline-Silicon Carbide Substrates
Part of Journal of Electronic Materials, p. 480-487, 2012
Part of Solid-State Electronics, p. 14-19, 2012
Electrical characterization of wurtzite (Al,B)N thin films
Part of Vacuum, p. 466-470, 2011
Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors
Part of Solid-State Electronics, p. 171-177, 2010
Oxygen out-diffusion from buried layers in SOI and SiC-SOI substrates
Part of Solid-State Electronics, p. 153-157, 2010
Investigation of SOI-LDMOS for RF-power applications using Computational Load-Pull
Part of IEEE Transactions on Electron Devices, p. 505-511, 2009
A Computational Load-Pull Method with Harmonic Loading for High-Efficiency Investigations
Part of Solid-State Electronics, p. 86-94, 2009
Thick NiSi Electrodes for AlN Electroacoustic Applications
Part of Electrochemical and solid-state letters, 2009
Optimisation of a smooth multilayer Nickel Silicide surface for ALN growth
Part of Journal of Physics, Conference Series, 2008
Oxide-Free Silicon to Silicon Carbide Heterobond
Part of ESC Transactions, p. 377-383, 2008
Part of Solid-State Electronics, p. 1024-1031, 2008
SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation
Part of IEEE Electron Device Letters, p. 125-127, 2008
Part of Microelectronic Engineering, p. 1635-1638, 2007
Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-k dielectrics
Part of Microelectronics and reliability, p. 536-539, 2007
Anisotropic dry etching of boron doped single crystal CVD diamond
Part of Carbon, p. 1839-1842, 2005
Low Resistivity SOI for Substrate Crosstalk Reduction
Part of IEEE Transactions on Electron Devices, p. 1920-1922, 2005
Investigation of the Thermal Stability of Reactively Sputter Deposited TiN MOS Gate Electrodes
Part of IEEE Transactions on Electron Devices, p. 2349-2352, 2005
Low-resistivity ZrNx metal gate in MOS devices
Part of Solid-State Electronics, p. 1410-1413, 2005
Metal gate work function extraction using Fowler-Nordheim tunneling techniques
Part of Microelectronic Engineering, p. 280-283, 2005
Part of Solid-State electronics, p. 907-914, 2005
Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes
Part of Microelectronic Engineering, p. 389-396, 2004
Part of Solid-State Electronics, p. 789-797, 2004
Modeling and characterization of capacitive coupling in trench-isolated structures on SOI substrates
Part of Solid-State Electronics, p. 43-49, 2004
Part of IEEE Transactions on Electron Devices, p. 790-796, 2004
Part of Solid-State Electronics, p. 1119-1126, 2004
A Novel Strained Si0.7Ge0.3 Surface-Channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 Gate Stack
Part of IEEE Electron Device Letters, p. 171-173, 2003
Small Signal and Power Evaluation of Novel BiCMOS -Compatible Short-Channel LDMOS Technology
Part of IEEE transactions on microwave theory and techniques, p. 1052-1056, 2003
On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
Part of IEEE Electron Device Letters, p. 550-552, 2003
Investigation of the electrical behavior of an asymmetric MOSFET
Part of Microelectronic Engineering, p. 428-438, 2003
Analysis of the Specific On-Resistance of Vertical High-Voltage DMOSFETs on SOI
Part of IEEE Transactions on Electron Devices, p. 1416-1419, 2003
Electrical Characterization of AlN MIS and MIM Structures
Part of IEEE Trans Electron Devices, p. 1214-1219, 2003
Deposition of HfO2 thin films in HfI4-based processes
Part of Journal of the Electrochemical Society, 2002
Iodide-Based Atomic Layer Deposition of ZrO2: Aspects of Phase Stability and Dielectric Properties
Part of Chemical Vapor Deposition, p. 105-109, 2002
Analysis and Design of a Low-Voltage High-Frequency LDMOS Transistor
Part of IEEE Transactions on Electron Devices, p. 976-980, 2002
Drift Region Optimization of Lateral RESURF Devices
Part of Solid-State Electronics, p. 1177-1184, 2002
Chemical mechanical polishing for surface smoothing
Part of Physica Scripta, p. 200-202, 2002
Effect of dopants on chemical mechanical polishing of silicon
Part of Microelectronic Engineering, p. 149-155, 2002
Part of Journal of vacuum science and technology B, p. 855-861, 2002
Sub-Circuit Based SPICE Model for High Voltage LDMOS Transistors
Part of Physica Scripta, p. 7-9, 2002
Part of Solid-State Electronics, p. 2105-2110, 2002
Self Heating Effects of High Power SOI Vertical DMOS Transistors with Lateral Drain Contacts
Part of Physica Scripta, p. 38-41, 2002
1 W/mm RF Power Denisty at 3.2 GHz for a Dual-Layer RESURF LDMOS Transistor
Part of IEEE Electron Device Letters, p. 206-208, 2002
Self-heating effects in SOI bipolar transistors
Part of Microelectronic Engineering, p. 339-352, 2001
Integration of high voltage devices on thick SOI substrates for automotive applications
Part of Solid-State Electronics, p. 629-632, 2001
Channel length extraction for DMOS transistors using capacitance-voltage measurements
Part of IEEE Trans on Electron Devices, p. 1454-1459, 2001
Membrane Covered Electrically Isolated Through-Wafer Via Hole
Part of J Micromech Microeng, p. 344-347, 2001
Electrical investigation of the silicon/diamond interface
Part of Microelectronic Engineering, p. 245-248, 1997
Electrical characterisation of silicon pn-junctions terminated with diamond
Part of Diamond and Related Materials, p. 1457-1461, 1996
Simulation of forward bias injection in proton irradiated silicon pn-junctions
Part of Solid-State Electronics, p. 1087-1092, 1996
Transient Measurements of Heat Distribution in Devices Fabricated on Silicon-On Diamond Material
Part of Japanese Journal of Applied Physics, p. 4706-4714, 1995
Vacancy related defect profiles in MeV cluster-ion irradiated silicon
Part of Nuclear Instruments and Methods in Physics Research Section B, p. 233-236, 1995
High Current Gain Hybrid Lateral Bipolar Operation of DMOS Transistors
Part of IEEE Transactions on Electron Devices, p. 1628-1635, 1995
Part of The Journal of Physical Chemistry C, p. 5552-5556, 1994
Very High Current Gain Enhancement by Substrate Biasing of Lateral Bipolar Transistors on Thin SOI
Part of Microelectronic Engineering, p. 379-382, 1993
A Self-Aligned Lateral Bipolar Transistor Concept Realized on SIMOX-material
Part of IEEE Transactions on Electron Devices, p. 2359-2360, 1993
Investigation of the Current-Voltage Behavior of a Combined Schottky-p-n diode
Part of Solid-State Electronics, p. 1229-1231, 1992
Chapters in book
High-Voltage SOI Devices for Automotive Applications
Part of Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment, p. 155-166, Kluwer Academic Publishers, The Netherlands, 2005
Comprehensive doctoral thesis
Conference papers
2018
Implementation of a Highly Efficient Solid State RF Power Source for Superconducting Cavities
2018
Time domain characterization of high power RFpulsed solid state amplifiers for linear accelerators
2016
2016
Part of Proceedings EUROSOI-ULIS, p. 33-36, 2015
Stress and reliability of integrated RF-LDMOS transistors
Part of CSTIC, 2015
LDMOS with over 0.3 W/mm output power at 8 GHz integrated in 65nm CMOS
Part of Proceedings of GigaHertz Symposium, p. 73, 2014
High-temperature behaviour of capped Ag/Ta and Ag/TaN metal stacks
p. 137-138, 2014
Modeling Ga-profiles for Cu(In,Ga)Se2 thin film solar cells with varying defect density
Part of 23rd International Photovoltaic Science and Engineering Conference; Taipei, Taiwan; October 28 - Nov 1, 2013, 2013
RF losses, crosstalk and temperature dependence for SOI and Si/SiC hybrid substrates
Part of Proceedings of EUROSOI2013, 2013
A +32.8 dBm LDMOS power amplifier for WLAN in 65 nm CMOS technology
Part of 2013 8th European Microwave Integrated Circuits Conference Proceedings, p. 53-56, 2013
The future of solid-state transistors
Part of TIARA workshop, 2013
Part of Proc. of EUROSOI 2012 workshop: VIII workshop on silicon on insulator technology, devices and circuits, Jan 23-25, Montpellier, France, p. 31-32, 2012
LDMOS transistors on 150 mm silicon-on-polycrystalline-silicon carbide hybrid substrates
Part of Proc. of EUROSOI 2011 workshop, p. 153-154, 2011
Mobility Profiles and Thermal Characterization of SOI and Si-on-SiC hybrid substrates
Part of 2011 IEEE International SOI Conference Proceedings, 2011
Part of 2010 IEEE International SOI Conference Proceedings, Oct 11-14, San Diego CA, p. 115-116, 2010
Enhanced drift in RF-power LDMOS transistors under pulsed stress conditions
Part of Proc. of German Microwave Conference 2010, 2010 Mar 15-17, Berlin, Germany, p. 182-185, 2010
150 mm Silicon-on-polycrystalline-Silicon Carbide
Part of Proceedings of EUROSOI, p. 101-102, 2010
Drift in thin film SOI piezoresistors
Part of Proc. of EUROSOI Workshop, 2010 Jan 25-27, Grenoble, France, p. 71-72, 2010
Increased efficiency in RF-power SOI-LDMOS transistors
Part of Proceedings of EUROSOI, p. 117-118, 2009
A Load-Pull Based Device Evaluation Method for Bias Modulated Applications
Part of Proc EuMC 2009, p. 1461-1464, 2009
A Novel Load-Pull Setup with Envelope Calibration for Bias Modulated Measurements
Part of Proc EuMC 2009, p. 942-945, 2009
Study of Oxygen Out-diffusion from buried oxide layers in Si/SiC hybrid- and SOI-substrates
Part of EUROSOI 2009 CONFERENCE PROCEEDINGS, p. 85-86, 2009
Part of Proceedings of IEEE SOI conference, 2009
Part of Proceedings of Eurosensors May 2009, Procedia Chemistry vol 1 (1), p. 80-83, 2009
Thick Silicides Synthesised With Smooth Surface for Integrated TFBAR Applications
Part of 2008 European Frequency and Time Forum, Toulouse, France, 2008
High Efficiency using Optimized SOI-Substrates
Part of Proceedings of GigaHertz Symposium, p. 94, 2008
Oxide free wafer bonding of silicon-on-silicon carbide substrates
p. 95-96, 2008
Thermal characterization of Silicon-on-SiC substrates
Part of Proceedings of IEEE International SOI Conference, p. 69-70, 2008
Silicon-on-SiC hybrid substrate with low RF-losses and improved thermal performance
Part of Proceedings of GHz Symposium, p. 79, 2008
Part of Proceedings of ULIS, p. 175-178, 2008
Silicon-on-SiC hybrid substrate with improved high-frequency and thermal performance
p. 51-52, 2008
Improved Thermal Characteristics in SOI using a Buried Aluminium Nitride Insulator
Part of EUROSOI Workshop, p. 97-98, 2008
Oxide-Free Silicon to Silicon Carbide Heterobond
2008
Buried aluminum nitride insulator for improving thermal conduction in SOI
Part of Proceedings of IEEE SOI Conference, p. 105-106, 2008
Part of Proceedings of the 3rd European Microwave Integrated Circuits Conference, 2008
A computational load-Pull Investigation of Harmonic Loading effects on AM-PM conversion
Part of Proc of GHz symposium, p. 83, 2008
Optimisation of a smooth multilayer Nickel Silicide surface for ALN growth
2007
Novel Silicon-on-SiC Substrate with Superior Thermal and RF Performance
Part of Proceedings IEEE SOI conference, p. 115-116, 2007
High Power Efficiency using Very Low Resistivity SOI
2007
Buried Aluminum Nitride Insulator for SOI Substrates
Part of Proc. of EUROSOI Workshop, p. 67-68, 2007
Part of Presented at Int. Conf. on Micro- and Nano-Engineering, 2006
Part of Proceedings of 28th International Conference on the Physics of Semiconductors (ICPS), 2006
Impact of Al-, Ni-, TiN-, and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-K dielectrics
2006
Low Resistivity SOI for Improved Efficiency of LDMOS
Part of Proceedings of EUROSOI Workshop, March, p. 69-70, 2006
Design and implementation of an ultra high precision parametric mismatch measurement system
Part of Proceedings ICMTS, p. 149-154, 2005
Crosstalk Reduction Using Low Resistivity SOI
Part of Proceedings of EUROSOI Workshop, p. 129-130, 2005
Efficient Crosstalk Reduction Using Very Low Resistivity SOI Substrate
Part of Proceedings of 35th ESSDERC, p. 233-236, 2005
Analysis of crosstalk in SOI substrates
Part of Proceedings of GHz2005 Symposium, p. 131-134, 2005
Improved Efficiency for RF Power-MOSFETs using Low Resistivity SOI Substrates
Part of Proceedings of GHz2005 Symposium, p. 135-138, 2005
Metal gate work function extraction using Fowler-Nordheim tunneling techniques
Part of INFOS 2005, 2005
Investigation of Ta2O5 thin film MIM capacitors in the RF regime
Part of Proceedings of GHz2005 Symposium, p. 311-314, 2005
An accurate direct extraction technique for the MBVD resonator model
Part of Proceedings of 34th European Microwave Conference, p. 1241-1244, 2004
Low Resistivity SOI Substrates for Improved Efficiency of RF Power-MOSFETs
Part of Proc of NATO Advanced Research Workshop on SOI, Kiev 25-29 April, 2004
High-Voltage SOI Devices for Automotive Applications
Part of Proc of NATO Advanced Research Workshop on SOI, Kiev, Russia, 25-29 April. Invited, 2004
Substrate Resistance Modeling for Noise Coupling Analysis
Part of Proceedings of the IEEE International Conference on Microelectronic Teststructures, p. 124-129, 2003
Part of Proceedings of ESSDERC, p. 525-528, 2003
Simulation and modeling of the substrate influence on the high frequency performance for RF LDMOS
Part of GHz2003 Symposium, Nov. 4-5, 2003
Analysis and improvments of high frequency substrate losses for RF MOSFETs
Part of Proceedings of IEEE SISPAD, p. 319-322, 2003
ALD metal-gate/high-k gate stack for Si and Si0.7Ge0.3 surface-channel pMOSFETs
Part of Proceedings of 33th ESSDERC2003, p. 263-266, 2003
Flatband Voltage Adjustment USing Reactively Sputtered TiN Metal Gates
Part of Proc. of the AVS 4th International Conference on Microelectronics & Interfaces, Santa Clara, USA, p. 215-217, 2003
Novel BiCMOS Compatible, Short Channel LDMOS Technology for Medium Voltage RF & Power Applications
Part of IEEE MTT-S Digest, p. 35-39, 2002
Comparison Between Si-LDMOS and GaN-Based Microwave Power Transistors
Part of Proc of IEEE Lester Eastman Conference on High Performance Devices, p. 149-154, 2002
Investigation of ALCVD TM TiN/Al2O3/HfAlOx/Al2O3 stack on epitaxial Si and Si0.7Ge0.3
Part of IEEE SISC, December, 2002
Vertical High Voltage Devices on Thick SOI with Back-End Trench Formation
Part of Proc of the 32nd ESSDERC’2002, pp. 295-298, 2002
Part of Presented at the Franco-Swedish Workshop on SOI, March 8-9, Grenoble, France, 2001
High Voltage LDMOS Transistors for Increasing RF Power Density and Gain
Part of GHz2001 Symposium, Nov. 26-27, 2001
Effect of Dopants on Mechanical Polishing of Silicon
Part of Proceedings of MAM2001, p. O4.4, March 5-7, Sigtuna Sweden, 2001
Self Heating Effects of High Power DMOS Transistors
Part of Presented at the Franco-Swedish Workshop on SOI, March 8-9, Grenoble, France, 2001
Chemical Mechanical Polishing for Surface Smoothing
Part of The 19th Nordic Semiconductor Meeting, Copenhagen, Denmark, May 20-23, 2001
SPICE Modeling of High Voltage LDMOS Transistors
Part of The 19th Nordic Semiconductor Meeting, Copenhagen, Denmark, May, 2001
Electrical Characterization of Thin Ta2O5 Films
Part of The 19th Nordic Semiconductor Meeting, Copenhagen, Denmark, May, 2001
Modelling of Self Heating Effects of High Power Novel Vertical DMOS Transistors
Part of The 19th Nordic Semiconductor Meeting, Copenhagen, Denmark, May, 2001
Integrated capacitors using reactive DC magnetron Co-sputtered (Ta2O5)1-x(TiO2)x thin films
Part of The AVS 2nd International Conference on Microelectronics & Interfaces, Santa Clara, USA, 2001
Substitutional Effects of the Dielectric Constant in Ta2O5
Part of Presented at AVS, Oct, 2001
Improved output conductance for low-voltage microwave LDMOS transistors
Part of Proc of the 30th ESSDERC´2000, p. 468-471, 2000
Power Characteristics of High Voltage LDMOS Transistors
Part of Proceedings of the IEEE European Microwave Conference, 2000
Membrane covered electrically isolated through-wafer via hole
Part of Workshop Digest MME'00, Uppsala, Sweden, 2000
Integration of high voltage devices on thick SOI substrates for automotive application
Part of Proceedings of the EUROSOI’2000, Oct. 25-27, Granada, Spain, 2000
Output power characteristics of high voltage LDMOS transistors
Part of Proc of the GHz2000 Symposium, March 13-14, Gothenburg, Sweden, p. 75-78, 2000
Simulation of SOI MOSFETs at GHz-frequencies
Part of Proceedings of the GHz2000 Symposium, pp. 399-402, Gothenburg March 13-14, Sweden, 2000
Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials
Part of MRS conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium., 1999
An On-Wafer De-Embedding Technique for Silicon Transistors at Microwave Frequencies
Part of IEEE ICMTS, Gothenburg, Sweden, 1999
A Capacitance-Voltage Measurement Method for DMOS Transistor Channel Length Extraction
Part of Proc. of IEEE ICMTS, p. 135-140, 1999
A CMOS Compatible Power MOSFET for Low Voltage GHz Operation
Part of IEEE European Microwave Conf vol 2, p. 21-24, 1999
An empirical high frequency large signal model for high voltage LDMOS transistors
Part of Proceedings of the IEEE European Microwave Conference, Vol.1, p. 733-738, 1998
Properties of the Drift Region in a LDMOS Transistor
Part of The 18th Nordic Semiconductor Meeting, Linköping, Sweden, June, 1998
Modeling of Fringe Capacitances in the Oxide and the Depletion Region of a MOS Structure
Part of Proc of the 3rd Micro Structure Workshop, Uppsala March 24-25, 27.1, 1998
Integration of diamond and silicon for electronic materials
Part of the MRS fall meeting, Symposium D-Integration of Dissimilar Materials in Micro- and Optoelectronics, Boston, MA, USA, Dec, 1998
Investigation of the Effect of Impurities in Slurries Used for Chemical Mechanical Polishing
Part of The 18th Nordic Semiconductor Meeting, Linköping, Sweden, June 7-10, p. E-70, 1998
Electrical investigation of the silicon/diamond interface
1997
A Novel High-Frequency High-Voltage LDMOS Transistor using an Extended Gate RESURF Technology
Part of ISPSD´97, p. 45-48, 1997
Modelling of the Gate Capacitance Behaviour of a High-Frequency Small-Signal LDMOS Transistor
Part of GigaHertz´97 in Kista, Sweden, p. 96-97, 1997
BESOI materials with diamond or aluminium as buried insulator
Part of DERA workshop on Novel Silicon-On-Insulator Materials and Applications, April 17-18, Malvern, UK, 1997
Colloidal Silica as a Final Polishing Slurry
Part of CMP´97. 4-5, p. 244-245, 1997
Electrical Properties of the Silicon/Diamond Interface
Part of Presented at the 17th Nordic Semiconductor Meeting, Norway, June, 1996
A New High Voltage DMOS Transistor for Microwave Applications
Part of The 17th Nordic Semicondustor Meeting, Norway, June, 1996
A new self aligned asymmetric lateral bipolar transistor
Part of The 17th Nordic Semiconductor Meeting, Norway, June, 1996
A High-Voltage Giga-Hertz DMOS Transistor Integrated into a Standard CMOS Process
Part of GigaHertz´95, National symposium on -wave technology and high speed electronics, 1995
Integration of a Novel High-Voltage Giga-Hertz DMOS Transistor into a Standard CMOS Process
Part of IEEE IEDM Technical Digest, p. 975-978, 1995
Simulation of the electrical and thermal behaviour of SOI/SOD devices
1994
Steady State and Transient Thermal Characterization of Silicon on Diamond Materials
Part of Presented at the 16th Nordic Semiconductor Meeting, 1994
High Current Gain Lateral Bipolar Action in DMOS Transistors
Part of Proceedings of ESSDERC, p. 221-224, 1994
Part of MEMS, 1993
Part of Proceedings of ESSDERC, p. 227-230, 1993
Silicon on Diamond Heat Sinks by Bonding and Etch Back
Part of Proceedings of IEEE International SOI Conference, p. 58-59, 1993
Very High Current Gain Enhancement by Substrate Biasing of Lateral Bipolar Transistors on Thin SOI
Part of Infos, 1993
Formation of heat sinks using bonding and etch back technique in combination with diamond deposition
Part of Proceedings of 2nd Int. Symp. on Semiconductor Wafer Bonding, p. 382, 1993
A Lateral Bipolar Transistor Concept Tested on SIMOX- and BSOI-Materials
Part of Proceednings IEEE International SOI Conference, p. 76-77, 1992
Activation of Sb in Ultra-Shallow poly-silicon emitter using rapid thermal processing
Part of Proc. Mat. Res. Soc. Symp., p. 317-322, 1989