Susanne Mirbt
Enhetschef vid Universitetsförvaltningen; Avdelningen för kvalitetsutveckling; Enheten för universitetspedagogik
- Mobiltelefon:
- 070-883 42 82
- E-post:
- susanne.mirbt@uu.se
- Besöksadress:
- Dag Hammarskjöldsväg 7
75237 Uppsala - Postadress:
- Box 256
75105 Uppsala
Professor vid Institutionen för fysik och astronomi; Materialteori
- Telefon:
- 018-471 36 22
- Mobiltelefon:
- 070-883 42 82
- E-post:
- susanne.mirbt@uu.se
- Besöksadress:
- Ångströmlaboratoriet, Regementsvägen 10
752 37 Uppsala - Postadress:
- Box 524
751 20 UPPSALA
- Akademiska meriter:
- FD, docent i fysik
Nyckelord
- density functional theory
- chalcogenides
- condensed matter physics
- semiconductor defects
- polarons
- interface magnetism
- iii-v semiconductors
- tio2
- materials theory

Publikationer
Senaste publikationer
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2020
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Subsurface Polaron Concentration As a Factor in the Chemistry of Reduced TiO2 (110) Surfaces
Ingår i The Journal of Physical Chemistry C, s. 11325-11334, 2017
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High resistivity in undoped CdTe: carrier compensation of Te antisites and Cd vacancies
Ingår i Journal of Physics D, 2016
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Ingår i AIP Advances, 2015
- DOI för Cl-doping of Te-rich CdTe: Complex formation, self-compensation and self-purification from first principles
- Ladda ner fulltext (pdf) av Cl-doping of Te-rich CdTe: Complex formation, self-compensation and self-purification from first principles
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Small hole polaron in CdTe: Cd-vacancy revisited
Ingår i Scientific Reports, 2015
- DOI för Small hole polaron in CdTe: Cd-vacancy revisited
- Ladda ner fulltext (pdf) av Small hole polaron in CdTe: Cd-vacancy revisited
Alla publikationer
Artiklar i tidskrift
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Subsurface Polaron Concentration As a Factor in the Chemistry of Reduced TiO2 (110) Surfaces
Ingår i The Journal of Physical Chemistry C, s. 11325-11334, 2017
-
High resistivity in undoped CdTe: carrier compensation of Te antisites and Cd vacancies
Ingår i Journal of Physics D, 2016
-
Ingår i AIP Advances, 2015
- DOI för Cl-doping of Te-rich CdTe: Complex formation, self-compensation and self-purification from first principles
- Ladda ner fulltext (pdf) av Cl-doping of Te-rich CdTe: Complex formation, self-compensation and self-purification from first principles
-
Small hole polaron in CdTe: Cd-vacancy revisited
Ingår i Scientific Reports, 2015
- DOI för Small hole polaron in CdTe: Cd-vacancy revisited
- Ladda ner fulltext (pdf) av Small hole polaron in CdTe: Cd-vacancy revisited
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Materials modelling for energy and fuels: From photovoltaics to photocatalysis
Ingår i Abstracts of Papers of the American Chemical Society, 2014
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Excess electron trapping at surface oxygen vacancy in TiO2: Origin of STM anomaly
Ingår i Abstracts of Papers of the American Chemical Society, 2014
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Bipolaron Formation Induced by Oxygen Vacancy at Rutile TiO2(110) Surfaces
Ingår i The Journal of Physical Chemistry C, s. 9429-9435, 2014
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Tailoring of defect levels by deformations: Te-antisite in CdTe
Ingår i Journal of Physics, s. 415801, 2013
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Hydrogen on III-V (110) surfaces: Charge accumulation and STM signatures
Ingår i Physical Review B. Condensed Matter and Materials Physics, 2013
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Ingår i Journal of Physics, s. 435504, 2012
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Influence of Vanadium spin-polarization on the dissolution of Hydrogen in Vanadium
Ingår i Physical Review B. Condensed Matter and Materials Physics, 2009
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Density functional theory calculations of defect energies using supercells
Ingår i Modelling and Simulation in Materials Science and Engineering, 2009
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Increasing the equilibrium solubility of dopants in semiconductor multilayers and alloys
Ingår i Physical Review Letters, s. 105501, 2008
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Breakdown of cation vacancies into anion vacancy-antisite complexes on III-V semiconductor surfaces
Ingår i Physical Review B. Condensed Matter and Materials Physics, s. 155318, 2008
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Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces
Ingår i Physical Review Letters, 2008
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Anomalies in transition metal conductivity: Strong evidence for Fermi-velocity dominance
Ingår i Physical Review B. Condensed Matter and Materials Physics, s. 155123, 2008
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Ingår i Physical Review B. Condensed Matter and Materials Physics, s. 195304, 2008
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Diffusion mechanism of Zn in InP and GaP from first principles
Ingår i Physical Review B. Condensed Matter and Materials Physics, s. 113201, 2008
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Theoretical calculations of mobility enhancement in strained silicon
Ingår i Physical Review B. Condensed Matter and Materials Physics, s. 195213, 2007
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Ingår i Physical Review B, 2006
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Point defects on the (110) surfaces of InP, InAs, and InSb: A comparison with bulk
Ingår i Physical Review B. Condensed Matter and Materials Physics, 2006
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Ingår i Physical Review B, s. 11, 2006
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Electronic structure and magnetism of diluted magnetic semiconductors - a first principles study
Ingår i Journal of Magnetism and Magnetic Materials, s. 1408-1411, 2005
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Relative concentration and structure of native defects in GaP
Ingår i Physical Review B, 2005
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Electronic structure and magnetism of diluted magnetic semiconductors-a first principles study
Ingår i Journal of magnetism and magnetic materials, s. 1408, 2005
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H placement in Cr(Mo, Fe)/V supercells: The origin of the dead layers
Ingår i Physical Review B, 2005
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Relative concentration and structure of native defects in GaP
Ingår i Phys. Rev. B, s. 195213, 2005
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H placement in Cr(Mo,Fe)/V supercells: The origin of the dead layers.
Ingår i Physical Review B, 2005
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Effect of the Mn clustering in (GaMn)N on magnetic transition temperature
Ingår i Physical Review B, 2005
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Resistivity of hydrogen-loaded Fe/V and Mo/V (100) superlattices: The role of vanadium expansion
Ingår i Physical review. B, Condensed matter, s. 205409, 2004
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Defect structure of Ga1−xMnxAs: A cross-sectional tunneling microscopy study
Ingår i Physical Review B, 2004
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Resistivity of hydrogen-loaded Fe/V and Mo/V (100) superlattices: The role of vanadium expansion
Ingår i Phyical Review B, s. 205409.1-205409, 2004
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Ingår i Physical Review B, s. 195202, 2004
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Resistivity of hydrogen-loaded Fe/V and Mo/V (100) superlattices: The role of vanadium expansion
Ingår i Physical Review, s. 205409, 2004
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Origin of the negative GMR effects in Cr_xCo_1-x/cu/Co (111) trilayers
Ingår i Physical Review B, 2004
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Magnetic and electronic structure of (Ga1-xMnx)As
Ingår i Physical Review B. Condensed Matter and Materials Physics, s. 205201, 2003
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Electronic structure and magnetism of Mn-doped GaN
Ingår i Physical Review B Condensed Matter, s. 205210, 2003
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First-principles calculations of Fe on GaAs(100)
Ingår i Physical Review B, s. 155421, 2003
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Structure of the P vacancy on the InP(110) surface from first principles
Ingår i Physical Review B, 2003
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Structure of the [Zn_In-V_P] defect complex in Zn doped InP
Ingår i Physical Review B, 2003
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Magnetic properties of 3d-impurities substituted in GaAs
Ingår i Journal of Physics, s. 3295, 2002
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Structural and magnetic properties of Fe/ZnSe interfaces
Ingår i Physical Review B, s. 144435, 2002
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Atomic and electronic properties on the In-group-V (110) anion vacancy surfaces
Ingår i Physical Review B, s. 155326, 2002
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A general rule for surface reconstructions of III-V semiconductors
Ingår i Surface Science, s. 177, 1999
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Trends and anomalies in 3d transition metal conductivity
Ingår i Physical Review Letters
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Why does charge accumulate on the surfaces of InAs but not on other III-V semiconductors?
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The nature of cation vacancies on III-V semiconductor surfaces
Kapitel i böcker, delar av antologi
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Modeling ground state properties at the ferromagnet-semiconductor interface
Ingår i Computational modeling and simulation of materials III, part B, s. 283, 2004
Konferensbidrag
Manuskript (preprint)
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Influence of magnetization on Hydrogen dissolution in Vanadium
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Ordered defect phases in CIGS form llocalized electron paths
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Calculated STM-images of native defects on the (110) surfaces of InP, InAs, and InSb
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Piezoresistivity of Metals: Manifestation of orbital orientation
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Conductivity variation upon hydrogen loading within Cr/V multi layers
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