Susanne Mirbt
Enhetschef vid Universitetsförvaltningen; Avdelningen för kvalitetsutveckling; Enheten för universitetspedagogik
- Mobiltelefon:
- 070-883 42 82
- E-post:
- susanne.mirbt@uu.se
- Besöksadress:
- Dag Hammarskjöldsväg 7
75237 Uppsala - Postadress:
- Box 256
75105 Uppsala
Professor vid Institutionen för fysik och astronomi; Materialteori
- Telefon:
- 018-471 36 22
- Mobiltelefon:
- 070-883 42 82
- E-post:
- susanne.mirbt@uu.se
- Besöksadress:
- Ångströmlaboratoriet, Regementsvägen 10
- Postadress:
- Box 516
751 37 UPPSALA
- Akademiska meriter:
- FD, docent i fysik
Nyckelord
- density functional theory
- chalcogenides
- condensed matter physics
- semiconductor defects
- polarons
- interface magnetism
- iii-v semiconductors
- tio2
- materials theory

Publikationer
Senaste publikationer
2020
Subsurface Polaron Concentration As a Factor in the Chemistry of Reduced TiO2 (110) Surfaces
Ingår i The Journal of Physical Chemistry C, s. 11325-11334, 2017
High resistivity in undoped CdTe: carrier compensation of Te antisites and Cd vacancies
Ingår i Journal of Physics D, 2016
Ingår i AIP Advances, 2015
- DOI för Cl-doping of Te-rich CdTe: Complex formation, self-compensation and self-purification from first principles
- Ladda ner fulltext (pdf) av Cl-doping of Te-rich CdTe: Complex formation, self-compensation and self-purification from first principles
Small hole polaron in CdTe: Cd-vacancy revisited
Ingår i Scientific Reports, 2015
- DOI för Small hole polaron in CdTe: Cd-vacancy revisited
- Ladda ner fulltext (pdf) av Small hole polaron in CdTe: Cd-vacancy revisited
Alla publikationer
Artiklar i tidskrift
Subsurface Polaron Concentration As a Factor in the Chemistry of Reduced TiO2 (110) Surfaces
Ingår i The Journal of Physical Chemistry C, s. 11325-11334, 2017
High resistivity in undoped CdTe: carrier compensation of Te antisites and Cd vacancies
Ingår i Journal of Physics D, 2016
Ingår i AIP Advances, 2015
- DOI för Cl-doping of Te-rich CdTe: Complex formation, self-compensation and self-purification from first principles
- Ladda ner fulltext (pdf) av Cl-doping of Te-rich CdTe: Complex formation, self-compensation and self-purification from first principles
Small hole polaron in CdTe: Cd-vacancy revisited
Ingår i Scientific Reports, 2015
- DOI för Small hole polaron in CdTe: Cd-vacancy revisited
- Ladda ner fulltext (pdf) av Small hole polaron in CdTe: Cd-vacancy revisited
Materials modelling for energy and fuels: From photovoltaics to photocatalysis
Ingår i Abstracts of Papers of the American Chemical Society, 2014
Excess electron trapping at surface oxygen vacancy in TiO2: Origin of STM anomaly
Ingår i Abstracts of Papers of the American Chemical Society, 2014
Bipolaron Formation Induced by Oxygen Vacancy at Rutile TiO2(110) Surfaces
Ingår i The Journal of Physical Chemistry C, s. 9429-9435, 2014
Tailoring of defect levels by deformations: Te-antisite in CdTe
Ingår i Journal of Physics, s. 415801, 2013
Hydrogen on III-V (110) surfaces: Charge accumulation and STM signatures
Ingår i Physical Review B. Condensed Matter and Materials Physics, 2013
Ingår i Journal of Physics, s. 435504, 2012
Influence of Vanadium spin-polarization on the dissolution of Hydrogen in Vanadium
Ingår i Physical Review B. Condensed Matter and Materials Physics, 2009
Density functional theory calculations of defect energies using supercells
Ingår i Modelling and Simulation in Materials Science and Engineering, 2009
Increasing the equilibrium solubility of dopants in semiconductor multilayers and alloys
Ingår i Physical Review Letters, s. 105501, 2008
Breakdown of cation vacancies into anion vacancy-antisite complexes on III-V semiconductor surfaces
Ingår i Physical Review B. Condensed Matter and Materials Physics, s. 155318, 2008
Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces
Ingår i Physical Review Letters, 2008
Anomalies in transition metal conductivity: Strong evidence for Fermi-velocity dominance
Ingår i Physical Review B. Condensed Matter and Materials Physics, s. 155123, 2008
Ingår i Physical Review B. Condensed Matter and Materials Physics, s. 195304, 2008
Diffusion mechanism of Zn in InP and GaP from first principles
Ingår i Physical Review B. Condensed Matter and Materials Physics, s. 113201, 2008
Theoretical calculations of mobility enhancement in strained silicon
Ingår i Physical Review B. Condensed Matter and Materials Physics, s. 195213, 2007
Point defects on the (110) surfaces of InP, InAs, and InSb: A comparison with bulk
Ingår i Physical Review B. Condensed Matter and Materials Physics, 2006
Ingår i Phys. Rev. B, 2006
Ingår i Physical Review B, s. 11, 2006
Electronic structure and magnetism of diluted magnetic semiconductors-a first principles study
Ingår i Journal of magnetism and magnetic materials, s. 1408, 2005
Electronic structure and magnetism of diluted magnetic semiconductors - a first principles study
Ingår i JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, s. 1408, 2005
H placement in Cr(Mo, Fe)/V supercells: The origin of the dead layers
Ingår i Physical Review B, 2005
Relative concentration and structure of native defects in GaP
Ingår i Phys. Rev. B, s. 195213, 2005
H placement in Cr(Mo,Fe)/V supercells: The origin of the dead layers.
Ingår i Physical Review B, 2005
Effect of the Mn clustering in (GaMn)N on magnetic transition temperature
Ingår i Physical Review B, 2005
Relative concentration and structure of native defects in GaP
Ingår i Physical Review B, s. 195213, 2005
Defect structure of Ga1−xMnxAs: A cross-sectional tunneling microscopy study
Ingår i Physical Review B, 2004
Resistivity of hydrogen-loaded Fe/V and Mo/V (100) superlattices: The role of vanadium expansion
Ingår i Phyical Review B, s. 205409, 2004
Resistivity of hydrogen-loaded Fe/V and Mo/V (100) superlattices: The role of vanadium expansion
Ingår i Phyical Review B, s. 205409.1-205409, 2004
Origin of the negative GMR effects in Cr_xCo_1-x/cu/Co (111) trilayers
Ingår i Physical Review B, 2004
Ingår i Physical Review B, s. 195202, 2004
Resistivity of hydrogen-loaded Fe/V and Mo/V (100) superlattices: The role of vanadium expansion
Ingår i Physical Review, s. 205409, 2004
Magnetic and electronic structure of (Ga1-xMnx)As
Ingår i Physical Review B. Condensed Matter and Materials Physics, s. 205201, 2003
Electronic structure and magnetism of Mn-doped GaN
Ingår i Physical Review B Condensed Matter, s. 205210, 2003
First-principles calculations of Fe on GaAs(100)
Ingår i Physical Review B, s. 155421, 2003
Structure of the P vacancy on the InP(110) surface from first principles
Ingår i Physical Review B, 2003
Structure of the [Zn_In-V_P] defect complex in Zn doped InP
Ingår i Physical Review B, 2003
Magnetic properties of 3d-impurities substituted in GaAs
Ingår i Journal of Physics, s. 3295, 2002
Structural and magnetic properties of Fe/ZnSe interfaces
Ingår i Physical Review B, s. 144435, 2002
Atomic and electronic properties on the In-group-V (110) anion vacancy surfaces
Ingår i Physical Review B, s. 155326, 2002
A general rule for surface reconstructions of III-V semiconductors
Ingår i Surface Science, s. 177, 1999
Trends and anomalies in 3d transition metal conductivity
Ingår i Physical Review Letters
Why does charge accumulate on the surfaces of InAs but not on other III-V semiconductors?
The nature of cation vacancies on III-V semiconductor surfaces
Kapitel i böcker, delar av antologi
Modeling ground state properties at the ferromagnet-semiconductor interface
Ingår i Computational modeling and simulation of materials III, part B, s. 283, 2004
Konferensbidrag
Manuskript (preprint)
Influence of magnetization on Hydrogen dissolution in Vanadium
Ordered defect phases in CIGS form llocalized electron paths
Calculated STM-images of native defects on the (110) surfaces of InP, InAs, and InSb
Piezoresistivity of Metals: Manifestation of orbital orientation
Conductivity variation upon hydrogen loading within Cr/V multi layers